Datasheets
2N7002 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for 2N7002 by Philips Semiconductors

Results Overview of 2N7002 by Philips Semiconductors

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2N7002 Information

2N7002 by Philips Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N7002

Part # Distributor Description Stock Price Buy
Bristol Electronics   2270
RFQ
ComSIT USA N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB ECCN: EAR99 RoHS: Compliant Stock DE - 17675
Stock ES - 54322
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Velocity Electronics Our Stock 215
RFQ

Part Details for 2N7002

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2N7002 Part Data Attributes

2N7002 Philips Semiconductors
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2N7002 Philips Semiconductors Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer PHILIPS SEMICONDUCTORS
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 0.115 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.2 W
Surface Mount YES
Terminal Finish MATTE TIN

Alternate Parts for 2N7002

This table gives cross-reference parts and alternative options found for 2N7002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N7002 North American Philips Discrete Products Div Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, 2N7002 vs 2N7002
Part Number Manufacturer Composite Price Description Compare
VP2206N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.64A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 2N7002 vs VP2206N3-G
BSS192,115 NXP Semiconductors Check for Price BSS192 - 240 V, P-channel vertical D-MOS transistor SOT-89 3-Pin 2N7002 vs BSS192,115
BSS192,135 NXP Semiconductors Check for Price BSS192 - 240 V, P-channel vertical D-MOS transistor SOT-89 3-Pin 2N7002 vs BSS192,135
TP5322K1-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.12A I(D), 220V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, GREEN PACKAGE-3 2N7002 vs TP5322K1-G
TN0104N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.45A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 2N7002 vs TN0104N3-G
FDN359BN Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 2N7002 vs FDN359BN
TP2104N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 2N7002 vs TP2104N3-G
BS250PSTZ Diodes Incorporated Check for Price Transistor 2N7002 vs BS250PSTZ
TN0610N3-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN, TO-92(N3), 3 PIN 2N7002 vs TN0610N3-G
BSS131E-6327 Infineon Technologies AG Check for Price 100mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN 2N7002 vs BSS131E-6327

2N7002 Related Parts

2N7002 Frequently Asked Questions (FAQ)

  • The 2N7002 is a low-frequency device, and its maximum operating frequency is typically around 100 kHz to 1 MHz. However, it can be used at higher frequencies with proper design and layout considerations.

  • To ensure the 2N7002 is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be less than the gate-source voltage. Additionally, the gate current should be limited to prevent overheating.

  • The maximum power dissipation of the 2N7002 is 350 mW. However, this value can be derated based on the ambient temperature and the thermal resistance of the package.

  • While the 2N7002 can be used as a switch, it is not suitable for high-current applications due to its limited current rating of 500 mA. For high-current applications, a more suitable device with a higher current rating should be used.

  • To protect the 2N7002 from ESD, it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.

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