Part Details for 2N7002 by Philips Semiconductors
Results Overview of 2N7002 by Philips Semiconductors
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002 Information
2N7002 by Philips Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Bristol Electronics | 2270 |
|
RFQ | ||
|
ComSIT USA | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB ECCN: EAR99 RoHS: Compliant |
|
|
RFQ | |
|
Velocity Electronics | Our Stock | 215 |
|
RFQ |
Part Details for 2N7002
2N7002 CAD Models
2N7002 Part Data Attributes
|
2N7002
Philips Semiconductors
Buy Now
Datasheet
|
Compare Parts:
2N7002
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 0.115 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.2 W | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN |
Alternate Parts for 2N7002
This table gives cross-reference parts and alternative options found for 2N7002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
2N7002 | North American Philips Discrete Products Div | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | 2N7002 vs 2N7002 |
2N7002 Frequently Asked Questions (FAQ)
-
The 2N7002 is a low-frequency device, and its maximum operating frequency is typically around 100 kHz to 1 MHz. However, it can be used at higher frequencies with proper design and layout considerations.
-
To ensure the 2N7002 is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be less than the gate-source voltage. Additionally, the gate current should be limited to prevent overheating.
-
The maximum power dissipation of the 2N7002 is 350 mW. However, this value can be derated based on the ambient temperature and the thermal resistance of the package.
-
While the 2N7002 can be used as a switch, it is not suitable for high-current applications due to its limited current rating of 500 mA. For high-current applications, a more suitable device with a higher current rating should be used.
-
To protect the 2N7002 from ESD, it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.