Part Details for 2N7002-E3 by Vishay Intertechnologies
Results Overview of 2N7002-E3 by Vishay Intertechnologies
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002-E3 Information
2N7002-E3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 1253 |
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RFQ |
Part Details for 2N7002-E3
2N7002-E3 CAD Models
2N7002-E3 Part Data Attributes
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2N7002-E3
Vishay Intertechnologies
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Datasheet
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2N7002-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.115 A | |
Drain-source On Resistance-Max | 7.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.2 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
Alternate Parts for 2N7002-E3
This table gives cross-reference parts and alternative options found for 2N7002-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N7002 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SAME AS SOT-23, 3 PIN | 2N7002-E3 vs 2N7002 |
2N7002TRL13 | YAGEO Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2N7002-E3 vs 2N7002TRL13 |
2N7002D87Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, | 2N7002-E3 vs 2N7002D87Z |
2N7002T,215 | Nexperia | Check for Price | 2N7002T - N-channel TrenchMOS logic level FET@en-us TO-236 3-Pin | 2N7002-E3 vs 2N7002T,215 |
RK7002T116 | ROHM Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SST, 3 PIN | 2N7002-E3 vs RK7002T116 |
2N7002LT1 | Motorola Mobility LLC | Check for Price | 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, 3 PIN | 2N7002-E3 vs 2N7002LT1 |
2N7002 | Lite-On Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 2N7002-E3 vs 2N7002 |
2N7002T | Secos Corporation | Check for Price | Small Signal Field-Effect Transistor, | 2N7002-E3 vs 2N7002T |
2N7002 | NXP Semiconductors | Check for Price | 300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3 | 2N7002-E3 vs 2N7002 |
2N7002LT3 | Motorola Semiconductor Products | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, | 2N7002-E3 vs 2N7002LT3 |
2N7002-E3 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002-E3 is -55°C to 150°C.
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Yes, the 2N7002-E3 is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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The maximum current rating for the 2N7002-E3 is 1.5 A.
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The 2N7002-E3 is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
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The typical threshold voltage for the 2N7002-E3 is around 2.5 V.