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N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7000RLRAG by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1851 |
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RFQ | ||
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Quest Components | MOSFET N-CHAN SS 200MA 60V TO92 | 1307 |
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$0.0882 / $0.1960 | Buy Now |
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Quest Components | MOSFET N-CHAN SS 200MA 60V TO92 | 76 |
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$0.9528 / $1.9055 | Buy Now |
DISTI #
2N7000RLRAG
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Avnet Silica | Transistor MOSFET NCH 60V 02A 3Pin TO92 TR (Alt: 2N7000RLRAG) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 60V 200MA TO-92 | 5000 |
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$0.1081 / $0.1622 | Buy Now |
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2N7000RLRAG
onsemi
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Datasheet
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2N7000RLRAG
onsemi
N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-92 (TO-226) 5.33mm Body Height | |
Package Description | LEAD FREE, CASE 29-11, TO-226, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 29-11 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.2 A | |
Drain-source On Resistance-Max | 5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-92 | |
JESD-30 Code | O-PBCY-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.35 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for 2N7000RLRAG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7000RLRAG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N7000BUD26Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 2N7000RLRAG vs 2N7000BUD26Z |
2N7000TAJ18Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | 2N7000RLRAG vs 2N7000TAJ18Z |
2N7000D81Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 2N7000RLRAG vs 2N7000D81Z |
2N7000TAD74Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 2N7000RLRAG vs 2N7000TAD74Z |
2N7000RLRA | onsemi | Check for Price | N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL | 2N7000RLRAG vs 2N7000RLRA |
2N7000RLRMG | onsemi | Check for Price | N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD | 2N7000RLRAG vs 2N7000RLRMG |
The maximum operating temperature range for the 2N7000RLRAG is -55°C to 150°C.
Yes, the 2N7000RLRAG is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
The maximum drain-source voltage rating for the 2N7000RLRAG is 60V.
No, the 2N7000RLRAG is a low-power device with a maximum continuous drain current of 115mA, making it unsuitable for high-power applications.
The 2N7000RLRAG is a logic-level device, meaning it can be driven directly from a 3.3V or 5V logic output.