-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for 2N7000G by onsemi
Results Overview of 2N7000G by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7000G Information
2N7000G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7000G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Velocity Electronics | Our Stock | 2253 |
|
RFQ | |
|
DISTI #
2N7000G
|
Avnet Silica | Transistor MOSFET NCH 60V 02A 3Pin TO92 Bulk (Alt: 2N7000G) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
DISTI #
2N7000G
|
EBV Elektronik | Transistor MOSFET NCH 60V 02A 3Pin TO92 Bulk (Alt: 2N7000G) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
Vyrian | Transistors | 5389 |
|
RFQ |
Part Details for 2N7000G
2N7000G CAD Models
2N7000G Part Data Attributes
|
|
2N7000G
onsemi
Buy Now
Datasheet
|
Compare Parts:
2N7000G
onsemi
N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92 (TO-226) 5.33mm Body Height, 1000-BLKBX
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-92 (TO-226) 5.33mm Body Height | |
| Package Description | LEAD FREE, CASE 29-11, TO-226, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 29-11 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.35 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7000G
This table gives cross-reference parts and alternative options found for 2N7000G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7000G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7000TA | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | 2N7000G vs 2N7000TA |
| 2N7000BUD26Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 2N7000G vs 2N7000BUD26Z |
| 2N7000TAJ18Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | 2N7000G vs 2N7000TAJ18Z |
| 2N7000D81Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 2N7000G vs 2N7000D81Z |
| 2N7000TAD74Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 2N7000G vs 2N7000TAD74Z |
| 2N7000RLRA | onsemi | Check for Price | N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL | 2N7000G vs 2N7000RLRA |
2N7000G Frequently Asked Questions (FAQ)
-
The 2N7000G is a low-power, low-voltage MOSFET, and its maximum operating frequency is not explicitly stated in the datasheet. However, based on its characteristics, it is suitable for low-frequency applications up to a few hundred kHz.
-
To ensure the 2N7000G is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be within the recommended operating range. Additionally, the gate current should be sufficient to charge the gate capacitance quickly.
-
The thermal resistance of the 2N7000G is not explicitly stated in the datasheet. However, the thermal resistance of a similar device, the 2N7002G, is around 60°C/W. It's recommended to consult with onsemi's application engineers for more information.
-
While the 2N7000G can be used as a switch, it's not suitable for high-current applications due to its limited current rating (500mA) and power dissipation capabilities. For high-current applications, consider using a more suitable device with higher current ratings and power handling capabilities.
-
To protect the 2N7000G from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Additionally, consider adding ESD protection devices, such as TVS diodes, in the circuit design.