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Part Details for 2N7000BU by onsemi
Results Overview of 2N7000BU by onsemi
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7000BU Information
2N7000BU by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7000BU
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31Y5850
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Newark | Mosfet, N-Ch, 60V, 0.2A, To-226Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:200Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.9V, Msl:- Rohs Compliant: Yes |Onsemi 2N7000BU RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Bulk | 7018 |
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$0.1250 / $0.3430 | Buy Now |
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DISTI #
26AC6372
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Newark | Fet 60V 5.0 Ohm To92 Rohs Compliant: Yes |Onsemi 2N7000BU RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.1010 / $0.3910 | Buy Now |
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DISTI #
2N7000BU-ND
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DigiKey | MOSFET N-CH 60V 200MA TO92-3 Min Qty: 1 Lead time: 9 Weeks Container: Bulk |
22761 In Stock |
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$0.0763 / $0.3800 | Buy Now |
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DISTI #
2N7000BU
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Avnet Americas | Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-226AA, Through Hole - Bulk (Alt: 2N7000BU) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 0 Days Container: Bulk | 9850 |
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$0.0660 / $0.0746 | Buy Now |
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DISTI #
2N7000BU
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Avnet Americas | Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-226AA, Through Hole - Bulk (Alt: 2N7000BU) RoHS: Compliant Min Qty: 8197 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Bulk | 13339 Partner Stock |
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$0.2538 | Buy Now |
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DISTI #
512-2N7000BU
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Mouser Electronics | MOSFETs 60V N-Channel Sm Sig RoHS: Compliant | 15477 |
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$0.0750 / $0.3700 | Buy Now |
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DISTI #
V36:1790_06298039
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Arrow Electronics | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bulk RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2414 | Americas - 6599 |
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$0.0699 / $0.2590 | Buy Now |
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Onlinecomponents.com | N-Channel 60 V 5 Ohm Through Hole Advanced Small Signal Mosfet - TO-92 RoHS: Compliant |
10000 In Stock |
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$0.0728 / $0.1160 | Buy Now |
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DISTI #
85955638
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Verical | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bulk RoHS: Compliant Min Qty: 2916 Package Multiple: 1 Date Code: 2201 | Americas - 31942 |
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$0.1286 | Buy Now |
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DISTI #
83591479
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Verical | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bulk RoHS: Compliant Min Qty: 500 Package Multiple: 250 Date Code: 2414 | Americas - 10000 |
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$0.1002 / $0.1508 | Buy Now |
Part Details for 2N7000BU
2N7000BU CAD Models
2N7000BU Part Data Attributes
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2N7000BU
onsemi
Buy Now
Datasheet
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Compare Parts:
2N7000BU
onsemi
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 9 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 0.2 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.4 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed |
2N7000BU Frequently Asked Questions (FAQ)
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The 2N7000BU is a low-power, low-voltage N-channel MOSFET, and its maximum operating frequency is not explicitly stated in the datasheet. However, based on its characteristics, it is suitable for low-frequency applications up to 100 kHz.
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To ensure the 2N7000BU is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be within the recommended operating range. Additionally, the gate current should be sufficient to charge the gate capacitance quickly.
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The thermal resistance of the 2N7000BU is not explicitly stated in the datasheet. However, the thermal resistance of a similar package (SOT-23) is typically around 200-250°C/W. It's essential to consider thermal management when designing with the 2N7000BU.
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While the 2N7000BU can be used as a switch, it's not suitable for high-current applications due to its limited current rating (maximum continuous drain current is 115mA). For high-current applications, consider using a MOSFET with a higher current rating.
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To protect the 2N7000BU from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Additionally, consider adding ESD protection circuits or devices in your design to prevent damage from static electricity.