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Transistors / Small Signal Field-Effect Transistors / 2N7000_D26Z
Datasheets
2N7000_D26Z by:

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Part Details for 2N7000_D26Z by onsemi

Results Overview of 2N7000_D26Z by onsemi

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2N7000_D26Z Information

2N7000_D26Z by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N7000_D26Z

Part # Distributor Description Stock Price Buy
DISTI # 2N7000-D26Z
Avnet Silica Transistor MOSFET NCH 60V 02A 3Pin TO92 TR (Alt: 2N7000-D26Z) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Silica - 0
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Part Details for 2N7000_D26Z

2N7000_D26Z CAD Models

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2N7000_D26Z Part Data Attributes

Parametric Data
2N7000_D26Z onsemi
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2N7000_D26Z onsemi Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ON SEMICONDUCTOR
Package Description CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 4 Days
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.4 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2N7000_D26Z

This table gives cross-reference parts and alternative options found for 2N7000_D26Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7000_D26Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N7000TA Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN 2N7000_D26Z vs 2N7000TA
2N7000BUD26Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 2N7000_D26Z vs 2N7000BUD26Z
2N7000TAJ18Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN 2N7000_D26Z vs 2N7000TAJ18Z
2N7000D81Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 2N7000_D26Z vs 2N7000D81Z
2N7000TAD74Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 2N7000_D26Z vs 2N7000TAD74Z
2N7000RLRA onsemi Check for Price N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL 2N7000_D26Z vs 2N7000RLRA
Part Number Manufacturer Composite Price Description Compare
2N7000 Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, LEAD FREE, TO-92, 3 PIN 2N7000_D26Z vs 2N7000
2N7000RLRB Motorola Semiconductor Products Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 2N7000_D26Z vs 2N7000RLRB
2N7000RLRAG onsemi Check for Price N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL 2N7000_D26Z vs 2N7000RLRAG
2N7000BUD75Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 2N7000_D26Z vs 2N7000BUD75Z
2N7000D75Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 2N7000_D26Z vs 2N7000D75Z
2N7000BUD27Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 2N7000_D26Z vs 2N7000BUD27Z
2N7000J25Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN 2N7000_D26Z vs 2N7000J25Z
2N7000 InterFET Corporation Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA 2N7000_D26Z vs 2N7000
2N7000J60Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN 2N7000_D26Z vs 2N7000J60Z
2N7000D75Z onsemi Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 2N7000_D26Z vs 2N7000D75Z

2N7000_D26Z Related Parts

2N7000_D26Z Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the 2N7000-D26Z is -55°C to 150°C.

  • Yes, the 2N7000-D26Z is suitable for high-frequency switching applications due to its low gate charge and fast switching times.

  • The maximum gate-source voltage that can be applied to the 2N7000-D26Z is ±20V.

  • No, the 2N7000-D26Z is not suitable for linear amplifier applications due to its high drain-source resistance and low transconductance.

  • Yes, the 2N7000-D26Z is a logic-level MOSFET, meaning it can be driven directly from a logic gate output.

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