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Part Details for 2N7000 by onsemi
Results Overview of 2N7000 by onsemi
- Distributor Offerings: (25 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7000 Information
2N7000 by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7000
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K9650
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Newark | N Channel Mosfet, 60V, 200Ma, To-92, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:200Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.1V Rohs Compliant: Yes |Onsemi 2N7000 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 7920 |
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$0.1280 / $0.1510 | Buy Now |
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DISTI #
2N7000FS-ND
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DigiKey | MOSFET TO92 N 60V 0.2A 5OHM 150C Min Qty: 1 Lead time: 11 Weeks Container: Bulk |
44415 In Stock |
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$0.1037 / $0.4900 | Buy Now |
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DISTI #
2N7000
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Avnet Americas | Power MOSFET, N Channel, 60 V, 200 mA, 5 Ohm, TO-92, 3Pins, Through Hole - Bulk (Alt: 2N7000) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 11 Weeks, 0 Days Container: Bulk | 0 |
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RFQ | |
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DISTI #
2N7000
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Avnet Americas | Power MOSFET, N Channel, 60 V, 200 mA, 5 Ohm, TO-92, 3Pins, Through Hole - Bulk (Alt: 2N7000) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 11 Weeks, 0 Days Container: Bulk | 0 |
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RFQ | |
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DISTI #
512-2N7000
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Mouser Electronics | MOSFETs FET 60V 5.0 OHM TO92 RoHS: Compliant | 103318 |
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$0.1030 / $0.4900 | Buy Now |
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DISTI #
E02:0323_00044612
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Arrow Electronics | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bag RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks Date Code: 2513 | Europe - 90665 |
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$0.1030 / $0.5234 | Buy Now |
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DISTI #
V36:1790_06298027
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Arrow Electronics | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bag RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks Date Code: 2424 | Americas - 82010 |
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$0.0906 / $0.4606 | Buy Now |
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Future Electronics | N-Channel 60 V 5 Ohm Enhancement Mode Field Effect Transistor-TO-92-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks Container: Bag | 4691Bag |
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$0.0965 / $0.1110 | Buy Now |
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Future Electronics | N-Channel 60 V 5 Ohm Enhancement Mode Field Effect Transistor-TO-92-3 RoHS: Compliant pbFree: Yes Min Qty: 10000 Package Multiple: 1000 Lead time: 19 Weeks Container: Bag | 0Bag |
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$0.0892 / $0.1030 | Buy Now |
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Onlinecomponents.com | N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω RoHS: Compliant |
8250 In Stock |
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$0.0994 / $0.1239 | Buy Now |
Part Details for 2N7000
2N7000 CAD Models
2N7000 Part Data Attributes
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2N7000
onsemi
Buy Now
Datasheet
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Compare Parts:
2N7000
onsemi
N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92-3, 10000-BLKBG
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-92-3 | |
| Package Description | TO-226, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 135AN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 11 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.4 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7000
This table gives cross-reference parts and alternative options found for 2N7000. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7000, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7000-5 | Motorola Mobility LLC | Check for Price | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 2N7000 vs 2N7000-5 |
| 2N7000BUJ05Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | 2N7000 vs 2N7000BUJ05Z |
| 2N7000D89Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 2N7000 vs 2N7000D89Z |
| 2N7000_ND26Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, LEAD FREE, TO-92, 3 PIN | 2N7000 vs 2N7000_ND26Z |
| 2N7000RLRE | Motorola Semiconductor Products | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 2N7000 vs 2N7000RLRE |
| 2N7000RLRE | onsemi | Check for Price | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN | 2N7000 vs 2N7000RLRE |
| 2N7000D28Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, | 2N7000 vs 2N7000D28Z |
| 2N7000RLRE | Motorola Mobility LLC | Check for Price | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 2N7000 vs 2N7000RLRE |
| 2N7000J05Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | 2N7000 vs 2N7000J05Z |
2N7000 Frequently Asked Questions (FAQ)
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The 2N7000 can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
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To ensure the 2N7000 is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be less than the gate-source voltage.
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The maximum continuous drain current (Id) for the 2N7000 is 500mA, but it can handle up to 1A for short pulses.
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To protect the 2N7000 from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.
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Yes, the 2N7000 can be used as a switch in high-frequency circuits up to 1 GHz, but the gate-source capacitance (Cgs) and gate-drain capacitance (Cgd) should be considered in the design.