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Part Details for 2N7000 by Vishay Intertechnologies
Results Overview of 2N7000 by Vishay Intertechnologies
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2N7000 Information
2N7000 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N7000
2N7000 CAD Models
2N7000 Part Data Attributes
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2N7000
Vishay Intertechnologies
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Datasheet
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2N7000
Vishay Intertechnologies
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| JESD-609 Code | e0 | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
2N7000 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) of the 2N7000 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, the SOA is typically limited by the device's thermal characteristics, such as the maximum junction temperature (Tj) and the thermal resistance (Rthja). For the 2N7000, the maximum Tj is 150°C, and the Rthja is 62.5°C/W. Based on these values, the SOA can be estimated to be around 1.5 A at 25°C.
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To ensure the 2N7000 is properly biased for optimal performance, it's essential to follow the recommended biasing conditions outlined in the datasheet. This includes applying a gate-source voltage (Vgs) between 2.5 V and 5 V, and a drain-source voltage (Vds) within the specified range (up to 60 V). Additionally, the gate current (Ig) should be limited to the recommended maximum value (100 μA) to prevent overheating and ensure reliable operation.
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The typical switching frequency of the 2N7000 is not explicitly stated in the datasheet, but it can be estimated based on the device's switching characteristics. The 2N7000 has a typical rise time (tr) of 10 ns and a fall time (tf) of 15 ns, which suggests it can operate at frequencies up to several hundred kHz. However, the actual switching frequency will depend on the specific application, circuit design, and operating conditions.
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Yes, the 2N7000 can be used as a high-side switch, but it requires additional circuitry to ensure proper operation. Since the 2N7000 is a low-side switch, it's designed to operate with the source terminal connected to ground or a negative voltage. To use it as a high-side switch, you'll need to add a level-shifting circuit or a bootstrap circuit to ensure the gate-source voltage (Vgs) is properly biased.
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The 2N7000 has a built-in ESD protection diode, but it's essential to follow proper handling and storage procedures to prevent ESD damage. This includes using anti-static packaging, wrist straps, and mats, as well as avoiding direct contact with the device's pins. Additionally, it's recommended to add external ESD protection devices, such as TVS diodes or ESD arrays, to the circuit to provide additional protection.