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N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92-3 LF, 2000-FNFLD
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7000-D75Z by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
48AC1552
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Newark | Mosfet, N-Ch, 60V, 0.2A, To-92, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:200Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.1V Rohs Compliant: Yes |Onsemi 2N7000-D75Z RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.0860 / $0.1060 | Buy Now |
DISTI #
488-2N7000-D75ZCT-ND
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DigiKey | MOSFET N-CH 60V 200MA TO92-3 Min Qty: 1 Lead time: 9 Weeks Container: Cut Tape (CT), Tape & Box (TB) |
10367 In Stock |
|
$0.0821 / $0.5100 | Buy Now |
DISTI #
2N7000-D75Z
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Avnet Americas | Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo - Ammo Pack (Alt: 2N7000-D75Z) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 9 Weeks, 0 Days Container: Ammo Pack | 0 |
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$0.0821 / $0.0877 | Buy Now |
DISTI #
512-2N7000D75Z
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Mouser Electronics | MOSFETs N-CHANNEL 60V 200mA RoHS: Compliant | 2312 |
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$0.0820 / $0.5000 | Buy Now |
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Onlinecomponents.com | 2N7000 Series 60V 5 Ohms N-Ch Enhancement Mode Field Effect Transistor - TO-92 RoHS: Compliant |
6000 In Stock |
|
$0.0789 / $0.0873 | Buy Now |
DISTI #
83350675
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Verical | Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 | Americas - 6000 |
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$0.1067 / $0.1139 | Buy Now |
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Rochester Electronics | 2N7000 - Small Signal Field-Effect Transistor, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 4134 |
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$0.0690 / $0.1113 | Buy Now |
DISTI #
2N7000-D75Z
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TME | Transistor: N-MOSFET, unipolar, 60V, 200mA, Idm: 0.5A, 0.4W, TO92 Min Qty: 1 | 954 |
|
$0.1010 / $0.3490 | Buy Now |
DISTI #
2N7000-D75Z
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 8000 | 0 |
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$0.0800 | Buy Now |
DISTI #
2N7000-D75Z
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Avnet Asia | Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo (Alt: 2N7000-D75Z) RoHS: Compliant Min Qty: 8000 Package Multiple: 2000 Lead time: 9 Weeks, 0 Days | 0 |
|
$0.0758 / $0.0847 | Buy Now |
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2N7000-D75Z
onsemi
Buy Now
Datasheet
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2N7000-D75Z
onsemi
N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92-3 LF, 2000-FNFLD
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-92-3 LF | |
Manufacturer Package Code | 135AR | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.2 A | |
Drain-source On Resistance-Max | 5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-92 | |
JESD-30 Code | O-PBCY-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.4 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for 2N7000-D75Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7000-D75Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
2N7000-D26Z | onsemi | $0.1333 | N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92-3 LF, 2000-REEL | 2N7000-D75Z vs 2N7000-D26Z |
The maximum operating temperature range for the 2N7000-D75Z is -55°C to 150°C.
Yes, the 2N7000-D75Z is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
The maximum gate-source voltage that can be applied to the 2N7000-D75Z is ±20V.
No, the 2N7000-D75Z is not suitable for linear amplifier applications due to its high drain-source resistance and low transconductance.
Yes, the 2N7000-D75Z is a logic-level MOSFET, meaning it can be driven directly from a logic gate output.