Part Details for 2N6845 by Infineon Technologies AG
Results Overview of 2N6845 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N6845 Information
2N6845 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N6845
2N6845 CAD Models
2N6845 Part Data Attributes
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2N6845
Infineon Technologies AG
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Datasheet
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2N6845
Infineon Technologies AG
Power Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 115 mJ | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MILITARY STANDARD (USA) | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N6845
This table gives cross-reference parts and alternative options found for 2N6845. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6845, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| JANS2N6845 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | 2N6845 vs JANS2N6845 |
| 2N6845-JQRE1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 2N6845 vs 2N6845-JQRE1 |
| 2N6845-JQR | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 2N6845 vs 2N6845-JQR |
| IRFF9120PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6845 vs IRFF9120PBF |
| 2N6845-JQR-BE1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 2N6845 vs 2N6845-JQR-BE1 |
| 2N6845 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 2N6845 vs 2N6845 |
| IRFF9120-JQR-B | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 2N6845 vs IRFF9120-JQR-B |
| JANTXV2N6845 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, | 2N6845 vs JANTXV2N6845 |
| JANTX2N6845 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, | 2N6845 vs JANTX2N6845 |
2N6845 Frequently Asked Questions (FAQ)
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Infineon recommends a PCB layout with a large copper area connected to the drain pin to dissipate heat efficiently. A thermal via under the device can also help to reduce thermal resistance.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and storage temperature (Tstg). Additionally, consider using a heat sink or thermal interface material to reduce thermal resistance.
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The 2N6845 has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. Infineon recommends using an ESD wrist strap or mat, and storing the devices in anti-static packaging.
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Yes, the 2N6845 can be used in switching regulator applications, but it's essential to ensure that the device is operated within its recommended switching frequency range (typically up to 100 kHz) and that the gate drive circuit is properly designed to minimize switching losses.
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The gate resistor value depends on the specific application requirements, including the switching frequency, gate drive voltage, and desired rise and fall times. A general rule of thumb is to start with a value between 10 ohms and 100 ohms and adjust based on the specific requirements.