Part Details for 2N6798 by Infineon Technologies AG
Results Overview of 2N6798 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
2N6798 Information
2N6798 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N6798
| Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | HEXFET TRANSISTOR, HiRel - 200V, 5.5A, 0.400 ohm RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 1 Container: Bulk | 0Bulk |
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$13.2000 / $13.8600 | Buy Now |
Part Details for 2N6798
2N6798 CAD Models
2N6798 Part Data Attributes
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2N6798
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
2N6798
Infineon Technologies AG
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HERMETIC SEALED, TO-205AF, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 0.42 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MILITARY STANDARD (USA) | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N6798
This table gives cross-reference parts and alternative options found for 2N6798. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6798, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFF230 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 2N6798 vs IRFF230 |
| JAN2N6798 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 2N6798 vs JAN2N6798 |
| JANTXV2N6798 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 2N6798 vs JANTXV2N6798 |
| 2N6798 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 2N6798 vs 2N6798 |
| IRFF230 | Thomson Consumer Electronics | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 2N6798 vs IRFF230 |
| IRFF230-JQR-BR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 5.5A, 200V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 2N6798 vs IRFF230-JQR-BR1 |
| IRFF230PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6798 vs IRFF230PBF |
2N6798 Frequently Asked Questions (FAQ)
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Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
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The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
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Yes, the 2N6798 is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and snubber circuits to minimize ringing and EMI.
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Use a voltage clamp or a zener diode to protect the device from overvoltage. For overcurrent protection, consider using a current sense resistor and a comparator or a dedicated overcurrent protection IC.