Part Details for 2N6796 by Vishay Siliconix
Results Overview of 2N6796 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N6796 Information
2N6796 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N6796
| Part # | Distributor | Description | Stock | Price | Buy | |
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ES Components | SIL 2N6796 BARE DIE | 148 in Stock |
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Vyrian | Transistors | 222 |
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RFQ |
Part Details for 2N6796
2N6796 CAD Models
2N6796 Part Data Attributes
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2N6796
Vishay Siliconix
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Datasheet
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2N6796
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 8 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for 2N6796
This table gives cross-reference parts and alternative options found for 2N6796. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6796, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N6796 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN | 2N6796 vs 2N6796 |
2N6796 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the 2N6796 is -55°C to 150°C, although it can withstand storage temperatures up to 200°C.
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To ensure proper biasing, the 2N6796 requires a minimum gate-source voltage (Vgs) of 2V to 4V, and a drain-source voltage (Vds) of 10V to 30V, depending on the application.
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The maximum allowable power dissipation for the 2N6796 is 125W, but this can be derated based on the operating temperature and package type.
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Yes, the 2N6796 can be used in high-frequency applications up to 1MHz, but it's essential to consider the device's parasitic capacitances and inductances to ensure optimal performance.
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To protect the 2N6796 from ESD, it's recommended to handle the device with anti-static wrist straps, mats, or bags, and to follow proper ESD handling procedures during assembly and testing.