Part Details for 2N6796 by TT Electronics Power and Hybrid / Semelab Limited
Results Overview of 2N6796 by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
2N6796 Information
2N6796 by TT Electronics Power and Hybrid / Semelab Limited is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N6796
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
98K6265
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Newark | Mosfet, N, To-39, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:8A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Power Dissipation:25W, Msl:- Rohs Compliant: Yes |Tt Electronics/semelab 2N6796 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$16.6100 / $22.3500 | Buy Now |
Part Details for 2N6796
2N6796 CAD Models
2N6796 Part Data Attributes
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2N6796
TT Electronics Power and Hybrid / Semelab Limited
Buy Now
Datasheet
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Compare Parts:
2N6796
TT Electronics Power and Hybrid / Semelab Limited
8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SEMELAB LTD | |
| Part Package Code | BCY | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | SEMELAB | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N6796
This table gives cross-reference parts and alternative options found for 2N6796. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6796, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTXV2N6796 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 2N6796 vs JANTXV2N6796 |
| JANTXV2N6796 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN | 2N6796 vs JANTXV2N6796 |
| JANTX2N6796 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 2N6796 vs JANTX2N6796 |
| IRFF130 | Intersil Corporation | Check for Price | 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 2N6796 vs IRFF130 |
| 2N6796 | Microsemi Corporation | Check for Price | Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6796 vs 2N6796 |
| JANTXV2N6796 | Microsemi Corporation | Check for Price | Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6796 vs JANTXV2N6796 |
| JAN2N6796 | Microsemi Corporation | Check for Price | Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6796 vs JAN2N6796 |
| 2N6796 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 2N6796 vs 2N6796 |
| IRFF130R1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 2N6796 vs IRFF130R1 |