Part Details for 2N6796 by International Rectifier
Results Overview of 2N6796 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N6796 Information
2N6796 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N6796
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
V36:1790_15909714
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Arrow Electronics | Trans MOSFET N-CH 100V 8A 3-Pin TO-39 RoHS: Not Compliant Min Qty: 6 Package Multiple: 1 Lead time: 38 Weeks Date Code: 2412 | Americas - 293 |
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$15.4100 / $17.5490 | Buy Now |
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NexGen Digital | 7 |
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RFQ | ||
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ES Components | IR 2N6796 BARE DIE | 642 in Stock |
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RFQ |
Part Details for 2N6796
2N6796 CAD Models
2N6796 Part Data Attributes
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2N6796
International Rectifier
Buy Now
Datasheet
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Compare Parts:
2N6796
International Rectifier
Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | BCY | |
Package Description | HERMETIC SEALED, TO-205AF, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 4.3 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.195 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 25 W | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Reference Standard | MILITARY STANDARD (USA) | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 85 ns | |
Turn-on Time-Max (ton) | 105 ns |
Alternate Parts for 2N6796
This table gives cross-reference parts and alternative options found for 2N6796. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6796, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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JAN2N6796 | Microsemi Corporation | Check for Price | Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6796 vs JAN2N6796 |
IRFF130-JQR-BR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 2N6796 vs IRFF130-JQR-BR1 |
JANTX2N6796 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 2N6796 vs JANTX2N6796 |
IRFF130 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6796 vs IRFF130 |
JANTXV2N6796 | Microsemi Corporation | Check for Price | Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6796 vs JANTXV2N6796 |
IRFF130-JQR-B | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 2N6796 vs IRFF130-JQR-B |
2N6796 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | 2N6796 vs 2N6796 |
IRFF130PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6796 vs IRFF130PBF |
JAN2N6796 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 2N6796 vs JAN2N6796 |
JANTX2N6796 | Omnirel Corp | Check for Price | Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, HERMETIC SEALED, TO-205, 3 PIN | 2N6796 vs JANTX2N6796 |