Datasheets
2N6796 by:

Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN

Part Details for 2N6796 by International Rectifier

Results Overview of 2N6796 by International Rectifier

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2N6796 Information

2N6796 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N6796

Part # Distributor Description Stock Price Buy
DISTI # V36:1790_15909714
Arrow Electronics Trans MOSFET N-CH 100V 8A 3-Pin TO-39 RoHS: Not Compliant Min Qty: 6 Package Multiple: 1 Lead time: 38 Weeks Date Code: 2412 Americas - 293
  • 6 $17.5490
  • 10 $15.8930
  • 25 $15.4100
$15.4100 / $17.5490 Buy Now
NexGen Digital   7
RFQ
ES Components IR 2N6796 BARE DIE 642 in Stock
RFQ

Part Details for 2N6796

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2N6796 Part Data Attributes

2N6796 International Rectifier
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2N6796 International Rectifier Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code BCY
Package Description HERMETIC SEALED, TO-205AF, 3 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 4.3 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.195 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 25 W
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 85 ns
Turn-on Time-Max (ton) 105 ns

Alternate Parts for 2N6796

This table gives cross-reference parts and alternative options found for 2N6796. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6796, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
JAN2N6796 Microsemi Corporation Check for Price Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6796 vs JAN2N6796
IRFF130-JQR-BR1 TT Electronics Power and Hybrid / Semelab Limited Check for Price 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN 2N6796 vs IRFF130-JQR-BR1
JANTX2N6796 Unitrode Corp (RETIRED) Check for Price Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, 2N6796 vs JANTX2N6796
IRFF130 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6796 vs IRFF130
JANTXV2N6796 Microsemi Corporation Check for Price Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6796 vs JANTXV2N6796
IRFF130-JQR-B TT Electronics Power and Hybrid / Semelab Limited Check for Price 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN 2N6796 vs IRFF130-JQR-B
2N6796 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN 2N6796 vs 2N6796
IRFF130PBF International Rectifier Check for Price Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6796 vs IRFF130PBF
JAN2N6796 Unitrode Corp (RETIRED) Check for Price Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, 2N6796 vs JAN2N6796
JANTX2N6796 Omnirel Corp Check for Price Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, HERMETIC SEALED, TO-205, 3 PIN 2N6796 vs JANTX2N6796
Part Number Manufacturer Composite Price Description Compare
2N6796 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN 2N6796 vs 2N6796
2N6796 TT Electronics Power and Hybrid / Semelab Limited Check for Price 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN 2N6796 vs 2N6796
IRFF131 Intersil Corporation Check for Price 8A, 80V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 2N6796 vs IRFF131
IRFF123 Motorola Mobility LLC Check for Price 5A, 60V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 2N6796 vs IRFF123
JANS2N6788 Defense Logistics Agency Check for Price Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, 2N6796 vs JANS2N6788
JANTX2N6796 Harris Semiconductor Check for Price Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF 2N6796 vs JANTX2N6796
IRFF120 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6796 vs IRFF120
IRFF130 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, 2N6796 vs IRFF130
JANTX2N6796 Defense Logistics Agency Check for Price Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, 2N6796 vs JANTX2N6796
JANTXV2N6788 Harris Semiconductor Check for Price Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF 2N6796 vs JANTXV2N6788

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