Part Details for 2N6770 by Microsemi Corporation
Results Overview of 2N6770 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N6770 Information
2N6770 by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N6770
2N6770 CAD Models
2N6770 Part Data Attributes
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2N6770
Microsemi Corporation
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Datasheet
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2N6770
Microsemi Corporation
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, METAL CAN-2
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | TO-3 | |
| Package Description | TO-3, METAL CAN-2 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AE | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD OVER NICKEL | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N6770
This table gives cross-reference parts and alternative options found for 2N6770. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6770, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| JANTX2N6770 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | 2N6770 vs JANTX2N6770 |
| IRF450 | Rochester Electronics LLC | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | 2N6770 vs IRF450 |
| IRF450 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | 2N6770 vs IRF450 |
| IRF451 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 2N6770 vs IRF451 |
| IRF450E3 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN | 2N6770 vs IRF450E3 |
| IRF450 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | 2N6770 vs IRF450 |
| IRF451 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | 2N6770 vs IRF451 |
| IRF451 | Rochester Electronics LLC | Check for Price | 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | 2N6770 vs IRF451 |
| 2N6770 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | 2N6770 vs 2N6770 |
2N6770 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the 2N6770 is -55°C to 150°C, although it can withstand storage temperatures from -65°C to 200°C.
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To ensure proper biasing, the 2N6770 requires a minimum of 10V on the gate with respect to the source, and the drain-source voltage should be at least 10V higher than the gate-source voltage.
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The maximum allowable power dissipation for the 2N6770 is 125W, but this can be increased to 250W with proper heat sinking and thermal management.
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Yes, the 2N6770 can be used in switching applications, but it is not recommended for high-frequency switching due to its relatively high gate capacitance and switching losses.
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To protect the 2N6770 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is properly grounded during assembly and testing.