Part Details for 2N6770 by Intersil Corporation
Results Overview of 2N6770 by Intersil Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N6770 Information
2N6770 by Intersil Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N6770
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Vyrian | Transistors | 1443 |
|
RFQ |
Part Details for 2N6770
2N6770 CAD Models
2N6770 Part Data Attributes
|
|
2N6770
Intersil Corporation
Buy Now
Datasheet
|
Compare Parts:
2N6770
Intersil Corporation
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,12A I(D),TO-3
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERSIL CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 12 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for 2N6770
This table gives cross-reference parts and alternative options found for 2N6770. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6770, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N6770 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 2N6770 vs 2N6770 |
| UFN450 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | 2N6770 vs UFN450 |
| IRF451 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | 2N6770 vs IRF451 |
| IRF451 | Thomson Consumer Electronics | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 2N6770 vs IRF451 |
| 2N6770 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | 2N6770 vs 2N6770 |
| JANTX2N6770 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | 2N6770 vs JANTX2N6770 |
| IRF451 | International Rectifier | Check for Price | Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 2N6770 vs IRF451 |
| IRF450 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 2N6770 vs IRF450 |
| IRF450PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | 2N6770 vs IRF450PBF |
| IRF451 | Intersil Corporation | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,13A I(D),TO-3 | 2N6770 vs IRF451 |