Part Details for 2N6758 by Harris Semiconductor
Results Overview of 2N6758 by Harris Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N6758 Information
2N6758 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N6758
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),TO-3 | 34 |
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$12.4875 / $15.1875 | Buy Now |
Part Details for 2N6758
2N6758 CAD Models
2N6758 Part Data Attributes
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2N6758
Harris Semiconductor
Buy Now
Datasheet
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2N6758
Harris Semiconductor
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | RADIATION HARDENED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 150 pF | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 90 ns | |
| Turn-on Time-Max (ton) | 80 ns |
Alternate Parts for 2N6758
This table gives cross-reference parts and alternative options found for 2N6758. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6758, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF231 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 2N6758 vs IRF231 |
| IRF230 | Motorola Mobility LLC | Check for Price | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | 2N6758 vs IRF230 |
| JANHCA2N6758 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | 2N6758 vs JANHCA2N6758 |
| IRF230 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, | 2N6758 vs IRF230 |
| UFN232 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | 2N6758 vs UFN232 |
| IRF233 | New Jersey Semiconductor Products Inc | Check for Price | Trans MOSFET N-CH 150V 7.3A 3-Pin(2+Tab) TO-3 | 2N6758 vs IRF233 |
| 2N6758PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 2N6758 vs 2N6758PBF |
| JANTXV2N6758 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, FORMERLY TO-3, 2 PIN | 2N6758 vs JANTXV2N6758 |
| JAN2N6758 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | 2N6758 vs JAN2N6758 |
| 2N6758 | Intersil Corporation | Check for Price | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | 2N6758 vs 2N6758 |
2N6758 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the 2N6758 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within 80% of its maximum voltage and current ratings to ensure reliable operation.
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Thermal management is critical for the 2N6758, especially in high-power applications. Ensure good heat sinking, use a thermal interface material (TIM) if necessary, and consider using a heat sink with a thermal conductivity of at least 1 W/m-K. Also, follow the recommended PCB layout and thermal design guidelines to minimize thermal resistance.
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The recommended storage temperature range for the 2N6758 is -55°C to 150°C, as specified in the datasheet. However, it's essential to note that prolonged storage at high temperatures can affect the device's reliability and lifespan.
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Yes, the 2N6758 can be used in switching applications, but it's essential to consider the device's switching characteristics, such as turn-on and turn-off times, and ensure that the application's switching frequency is within the device's capabilities. Additionally, consider the device's power dissipation and thermal management requirements.
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The correct base resistor value for the 2N6758 depends on the specific application and the desired current gain. A general rule of thumb is to choose a base resistor value that ensures a base current of around 1/10th to 1/20th of the collector current. Consult the datasheet and application notes for more detailed guidance.