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Part Details for 2N6660 by Microchip Technology Inc
Results Overview of 2N6660 by Microchip Technology Inc
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N6660 Information
2N6660 by Microchip Technology Inc is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N6660
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
53Y4358
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Newark | Mosfet, N-Channel Enhancement Mode, 60V, 3 Ohm 3 To-39 Bag Rohs Compliant: Yes |Microchip 2N6660 RoHS: Compliant Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$13.6000 | Buy Now |
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DISTI #
2N6660MC-ND
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DigiKey | MOSFET N-CH 60V 410MA TO39 Min Qty: 1 Lead time: 6 Weeks Container: Bag |
2238 In Stock |
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$14.0375 / $15.9000 | Buy Now |
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DISTI #
2N6660
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Avnet Americas | Trans MOSFET N-CH 60V 0.41A 3-Pin TO-39 - Bag (Alt: 2N6660) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 6 Weeks, 0 Days Container: Bag | 0 |
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$7.6129 / $8.9485 | Buy Now |
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DISTI #
689-2N6660
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Mouser Electronics | MOSFETs 60V 3Ohm RoHS: Compliant | 400 |
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$14.0300 / $15.9000 | Buy Now |
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DISTI #
V99:2348_06427651
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Arrow Electronics | Trans MOSFET N-CH Si 60V 0.41A 3-Pin TO-39 Bag RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks Date Code: 2225 | Americas - 29 |
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$16.7681 | Buy Now |
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DISTI #
2N6660
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Microchip Technology Inc | MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, 3 Ohm, TO-39, Projected EOL: 2034-02-19 COO: Thailand ECCN: EAR99 RoHS: Compliant Lead time: 6 Weeks, 0 Days Container: Bag |
454 Alternates Available |
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$11.5400 / $15.9000 | Buy Now |
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Future Electronics | 2N6660 Series 60 V 3 Ohm Through Hole N-Channel HEXFET Mosfet - TO-205AD (TO-39) RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks Container: Bulk | 217Bulk |
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$13.2200 / $13.8800 | Buy Now |
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Onlinecomponents.com | Trans MOSFET N-CH Si 60V 0.41A 3-Pin TO-39 Bag RoHS: Compliant |
559 In Stock |
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$14.3800 / $42.3000 | Buy Now |
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DISTI #
81318736
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Verical | Trans MOSFET N-CH Si 60V 0.41A 3-Pin TO-39 Bag RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 2333 | Americas - 559 |
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$27.7420 / $54.9900 | Buy Now |
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DISTI #
71262715
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Verical | Trans MOSFET N-CH Si 60V 0.41A 3-Pin TO-39 Bag RoHS: Compliant Min Qty: 478 Package Multiple: 478 Date Code: 2333 | Americas - 478 |
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$30.1804 | Buy Now |
Part Details for 2N6660
2N6660 CAD Models
2N6660 Part Data Attributes
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2N6660
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
2N6660
Microchip Technology Inc
410mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | TO-39, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.39.00.01 | |
| Factory Lead Time | 6 Weeks | |
| Samacsys Manufacturer | Microchip | |
| Additional Feature | HIGH INPUT IMPEDANCE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.41 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10 pF | |
| JEDEC-95 Code | TO-39 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e4 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 6.25 W | |
| Power Dissipation-Max (Abs) | 6.25 W | |
| Pulsed Drain Current-Max (IDM) | 3 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | TS 16949 | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL GOLD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 10 ns | |
| Turn-on Time-Max (ton) | 10 ns |
Alternate Parts for 2N6660
This table gives cross-reference parts and alternative options found for 2N6660. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6660, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N6660 | Sensitron Semiconductors | Check for Price | Small Signal Field-Effect Transistor, | 2N6660 vs 2N6660 |
| 2N6660 | Unitrode Corporation | Check for Price | Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN | 2N6660 vs 2N6660 |
| 2N6660 | Advanced Semiconductor Inc | Check for Price | Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | 2N6660 vs 2N6660 |
| 2N6660 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 2N6660 vs 2N6660 |
| 2N6660 | Thales Group | Check for Price | Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN | 2N6660 vs 2N6660 |
| SX2N6660 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | 2N6660 vs SX2N6660 |
| 2N6660 | Unitrode Corp (RETIRED) | Check for Price | Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN | 2N6660 vs 2N6660 |
| 2N6660 | Motorola Semiconductor Products | Check for Price | Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD | 2N6660 vs 2N6660 |
| 2N6660 | Solitron Devices Inc | Check for Price | Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN | 2N6660 vs 2N6660 |
2N6660 Frequently Asked Questions (FAQ)
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The 2N6660 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
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To ensure proper biasing, connect the base to a voltage source through a resistor, and the emitter to ground through a resistor. The collector should be connected to a load or a voltage source.
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The maximum collector current rating for the 2N6660 is 500 mA, making it suitable for low-power applications.
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Yes, the 2N6660 can be used as a switch due to its high current gain and low saturation voltage. However, it's essential to ensure the base is properly biased to achieve the desired switching behavior.
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To protect the 2N6660 from ESD, use anti-static wrist straps, mats, or bags during handling and storage. Also, ensure the device is properly grounded during assembly and testing.