Part Details for 2N6508G by onsemi
Results Overview of 2N6508G by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N6508G Information
2N6508G by onsemi is a Silicon Controlled Rectifier.
Silicon Controlled Rectifiers are under the broader part category of Trigger Devices.
Trigger devices initiate or control actions in electronic circuits by producing output signals when specific input conditions are met. They are commonly used in timing circuits and pulse generators. Read more about Trigger Devices on our Trigger Devices part category page.
Price & Stock for 2N6508G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SMC-2N6508G
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Sensible Micro Corporation | XRECTIFIER SILICONE 50AMP 600 RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 2018+ Container: Bulk | 2 |
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RFQ | |
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Vyrian | Triggering Devices | 1000 |
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RFQ |
Part Details for 2N6508G
2N6508G CAD Models
2N6508G Part Data Attributes
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2N6508G
onsemi
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Datasheet
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2N6508G
onsemi
Silicon Controlled Rectifier - SCR, TO-220 3 LEAD STANDARD, 500-BLKBX
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220AB | |
| Package Description | LEAD FREE, CASE 221A-07, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 221A-07 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.30.00.80 | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | ANODE | |
| Configuration | SINGLE | |
| DC Gate Trigger Current-Max | 30 mA | |
| DC Gate Trigger Voltage-Max | 1.5 V | |
| Holding Current-Max | 40 mA | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Leakage Current-Max | 2 mA | |
| Non-Repetitive Pk On-state Cur | 250 A | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| On-state Current-Max | 8000 A | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| RMS On-state Current-Max | 25 A | |
| Repetitive Peak Off-state Voltage | 600 V | |
| Repetitive Peak Reverse Voltage | 600 V | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Trigger Device Type | SCR |
Alternate Parts for 2N6508G
This table gives cross-reference parts and alternative options found for 2N6508G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6508G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BT152-600R | Philips Semiconductors | Check for Price | Silicon Controlled Rectifier, 13000mA I(T), 600V V(DRM), | 2N6508G vs BT152-600R |
| BT145-500R | NXP Semiconductors | Check for Price | Silicon Controlled Rectifier, 25 A, 500 V, SCR, TO-220AB, PLASTIC, TO-220AB, 3 PIN | 2N6508G vs BT145-500R |
2N6508G Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the 2N6508G is -55°C to 150°C.
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To ensure proper biasing, the 2N6508G requires a minimum of 10V on the gate with respect to the source, and the drain-source voltage should be at least 10V higher than the gate-source voltage.
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The maximum allowable power dissipation for the 2N6508G is 125W at a case temperature of 25°C.
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To protect the 2N6508G from ESD, handle the device by the body, avoid touching the leads or pins, and use an anti-static wrist strap or mat when handling the device.
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Yes, the 2N6508G can be used in switching applications, but it's essential to ensure the device is properly biased and the switching frequency is within the recommended range to avoid overheating and reduce electromagnetic interference (EMI).