Part Details for 2N6340 by NTE Electronics Inc
Results Overview of 2N6340 by NTE Electronics Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
2N6340 Information
2N6340 by NTE Electronics Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N6340
2N6340 CAD Models
2N6340 Part Data Attributes
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2N6340
NTE Electronics Inc
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Datasheet
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2N6340
NTE Electronics Inc
Power Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 25 A | |
| Collector-Base Capacitance-Max | 300 pF | |
| Collector-Emitter Voltage-Max | 140 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 12 | |
| Fall Time-Max (tf) | 600 ns | |
| JEDEC-95 Code | TO-3 | |
| JESD-30 Code | O-MBFM-P2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 200 W | |
| Rise Time-Max (tr) | 400 ns | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 40 MHz | |
| Turn-off Time-Max (toff) | 2100 ns | |
| VCEsat-Max | 1.8 V |