Part Details for 2N6301E3 by Microchip Technology Inc
Results Overview of 2N6301E3 by Microchip Technology Inc
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N6301E3 Information
2N6301E3 by Microchip Technology Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N6301E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33AJ0880
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Newark | Power Bjt To-66 Rohs Compliant: Yes |Microchip 2N6301E3 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$25.5200 / $26.5400 | Buy Now |
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DISTI #
2N6301E3-ND
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DigiKey | TRANS NPN DARL 80V 8A TO66 Min Qty: 100 Lead time: 36 Weeks Container: Bulk | Temporarily Out of Stock |
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$26.5402 | Buy Now |
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DISTI #
2N6301E3
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Avnet Americas | Transistor Darlington NPN 80V 8A 2-Pin TO-213AA Tray - Bulk (Alt: 2N6301E3) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 36 Weeks, 0 Days Container: Bulk | 0 |
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$23.8848 / $25.5000 | Buy Now |
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DISTI #
494-2N6301E3
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Mouser Electronics | Bipolar Transistors - BJT Power BJT RoHS: Compliant | 0 |
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$26.5400 | Order Now |
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DISTI #
2N6301E3
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Microchip Technology Inc | Power BJT _ TO-66, Projected EOL: 2049-02-05 COO: Philippines ECCN: EAR99 Lead time: 36 Weeks, 0 Days |
386 Alternates Available |
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$28.5800 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 386 Factory Stock |
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$25.3200 / $53.0400 | Buy Now |
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NAC | Power BJT RoHS: Compliant Min Qty: 12 Package Multiple: 1 Container: Tray | 0 |
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$24.8800 / $29.1400 | Buy Now |
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Master Electronics | RoHS: Compliant | 386 Factory Stock |
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$25.3200 / $53.0400 | Buy Now |
Part Details for 2N6301E3
2N6301E3 CAD Models
2N6301E3 Part Data Attributes
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2N6301E3
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
2N6301E3
Microchip Technology Inc
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | TO-66, 2 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 36 Weeks | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Base Capacitance-Max | 200 pF | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JEDEC-95 Code | TO-213AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 75 W | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 8000 ns | |
| Turn-on Time-Max (ton) | 2000 ns | |
| VCEsat-Max | 3 V |
Alternate Parts for 2N6301E3
This table gives cross-reference parts and alternative options found for 2N6301E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6301E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTX2N6301 | Microchip Technology Inc | $39.4686 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin | 2N6301E3 vs JANTX2N6301 |
| 2N6301E3 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), NPN | 2N6301E3 vs 2N6301E3 |
| 2N6301-JQR-A | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN | 2N6301E3 vs 2N6301-JQR-A |
| 2N6301 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN | 2N6301E3 vs 2N6301 |
| JANTXV2N6301 | Microchip Technology Inc | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin | 2N6301E3 vs JANTXV2N6301 |
| 2N6301.MODR1 | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN | 2N6301E3 vs 2N6301.MODR1 |
| 2N6301 | Mospec Semiconductor Corp | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N6301E3 vs 2N6301 |
| 2N6301-JQR-B | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 8A, 80V, NPN, Si, POWER TRANSISTOR, TO-213AA, TO-66, 2 PIN | 2N6301E3 vs 2N6301-JQR-B |
| 2N6301R1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 8A, 80V, NPN, Si, POWER TRANSISTOR, TO-213AA, TO-66, 2 PIN | 2N6301E3 vs 2N6301R1 |
2N6301E3 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the 2N6301E3 is -40°C to +125°C.
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To ensure reliable operation in high-temperature environments, it is recommended to derate the power dissipation of the device according to the thermal derating curve provided in the datasheet, and to ensure good thermal conduction between the device and the heat sink or PCB.
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The maximum safe operating area (SOA) for the 2N6301E3 is defined by the boundaries of the output characteristics curves provided in the datasheet. Operating the device outside of these boundaries can result in reduced reliability or even device failure.
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To protect the 2N6301E3 from electrostatic discharge (ESD), it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat, and to ensure that the device is properly grounded during handling and assembly.
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The recommended storage temperature range for the 2N6301E3 is -40°C to +150°C.