Part Details for 2N5886 by Motorola Mobility LLC
Results Overview of 2N5886 by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
2N5886 Information
2N5886 by Motorola Mobility LLC is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N5886
2N5886 CAD Models
2N5886 Part Data Attributes
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2N5886
Motorola Mobility LLC
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Datasheet
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2N5886
Motorola Mobility LLC
25A, 80V, NPN, Si, POWER TRANSISTOR, TO-204AA
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 25 A | |
| Collector-Base Capacitance-Max | 500 pF | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 4 | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 200 W | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 4 MHz | |
| Turn-off Time-Max (toff) | 1800 ns | |
| VCEsat-Max | 4 V |
Alternate Parts for 2N5886
This table gives cross-reference parts and alternative options found for 2N5886. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N5886, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 2N5885 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2 | 2N5886 vs 2N5885 |
| 2N5886 | Rochester Electronics LLC | Check for Price | 25A, 80V, NPN, Si, POWER TRANSISTOR, TO-204AA, CASE 1-07, TO-3, 2 PIN | 2N5886 vs 2N5886 |
2N5886 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the 2N5886 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve to prevent damage or degradation.
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Thermal management is critical for the 2N5886, as excessive heat can reduce the device's lifespan. Ensure proper heat sinking, use a thermal interface material (TIM) if necessary, and maintain a safe junction temperature (Tj) below the maximum rating of 150°C.
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Store the 2N5886 in a dry, cool place, away from direct sunlight and moisture. Handle the devices by the body, avoiding touching the leads or die. Use anti-static precautions, such as wrist straps or mats, to prevent electrostatic discharge (ESD) damage.
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While the 2N5886 is primarily designed for linear amplifier applications, it can be used in switching circuits with caution. Ensure the device is operated within its safe operating area, and consider the potential for electromagnetic interference (EMI) and electromagnetic compatibility (EMC) issues.
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Choose biasing resistors based on the desired operating point, taking into account the device's current gain (β), collector-emitter voltage (Vce), and base-emitter voltage (Vbe). Consult the datasheet and relevant application notes for guidance on biasing circuit design.