Part Details for 2N5884G by onsemi
Results Overview of 2N5884G by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N5884G Information
2N5884G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N5884G
2N5884G CAD Models
2N5884G Part Data Attributes
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2N5884G
onsemi
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Datasheet
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2N5884G
onsemi
25 A, 80 V PNP Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-204 (TO-3) | |
| Package Description | TO-3, 2 PIN | |
| Pin Count | 2 | |
| Manufacturer Package Code | 1-07 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 25 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 4 | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 4 MHz |
Alternate Parts for 2N5884G
This table gives cross-reference parts and alternative options found for 2N5884G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N5884G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 2N5884 | Microchip Technology Inc | $74.3335 | Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin | 2N5884G vs 2N5884 |
| 2N5884 | Silicon Transistor Corporation | Check for Price | Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | 2N5884G vs 2N5884 |
| 2N5884 | Micro Commercial Components | Check for Price | Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 2 Pin, TO-3, 2 PIN | 2N5884G vs 2N5884 |
| 2N5884 | Texas Instruments | Check for Price | 20A, 80V, PNP, Si, POWER TRANSISTOR, TO-3 | 2N5884G vs 2N5884 |
| 2N5884 | Semitronics Corp | Check for Price | Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | 2N5884G vs 2N5884 |
| 2N5884 | STMicroelectronics | Check for Price | 25A, 80V, PNP, Si, POWER TRANSISTOR, TO-3 | 2N5884G vs 2N5884 |
| 2N5884 | Mospec Semiconductor Corp | Check for Price | Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | 2N5884G vs 2N5884 |
| 2N5884 | Space Power Electronics Inc | Check for Price | Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | 2N5884G vs 2N5884 |
| 2N5884 | Solid State Devices Inc (SSDI) | Check for Price | Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | 2N5884G vs 2N5884 |
2N5884G Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the 2N5884G is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage and current ratings. A safe operating area analysis should be performed to ensure the device operates within its thermal and electrical limits.
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To ensure the 2N5884G is properly biased for linear operation, the base-emitter voltage (VBE) should be set between 0.6V to 0.8V, and the collector-emitter voltage (VCE) should be set to at least 1V to 2V above the supply voltage. Additionally, the base current should be limited to prevent overheating and ensure a stable operating point.
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For optimal thermal performance, the 2N5884G should be mounted on a PCB with a large copper area for heat dissipation. A thermal pad or heat sink can be added to further improve heat dissipation. The device should be placed away from other heat sources, and the PCB should be designed to minimize thermal resistance.
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While the 2N5884G is primarily designed for linear amplification, it can be used in switching applications with proper design considerations. However, the device's switching speed and frequency limitations should be taken into account, and a suitable driver circuit may be required to ensure reliable switching operation.
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To protect the 2N5884G from electrostatic discharge (ESD), proper handling and storage procedures should be followed. The device should be stored in an anti-static bag or wrapped in anti-static material, and handling should be done with anti-static wrist straps or mats. Additionally, ESD protection devices such as TVS diodes or ESD protection arrays can be used in the circuit design.