Part Details for 2N5551RUBT by STMicroelectronics
Results Overview of 2N5551RUBT by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
2N5551RUBT Information
2N5551RUBT by STMicroelectronics is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N5551RUBT
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2N5551RUBT
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Avnet Americas | - Bulk (Alt: 2N5551RUBT) RoHS: Compliant Min Qty: 25 Package Multiple: 10 Lead time: 29 Weeks, 6 Days Container: Bulk | 0 |
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RFQ |
Part Details for 2N5551RUBT
2N5551RUBT CAD Models
2N5551RUBT Part Data Attributes
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2N5551RUBT
STMicroelectronics
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Datasheet
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2N5551RUBT
STMicroelectronics
Rad-Hard 160 V, 0.5 A NPN transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Factory Lead Time | 29 Weeks, 6 Days | |
| Samacsys Manufacturer | STMicroelectronics | |
| Collector Current-Max (IC) | 0.5 A | |
| Collector-Base Capacitance-Max | 6 pF | |
| Collector-Emitter Voltage-Max | 160 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 30 | |
| JESD-30 Code | R-XDSO-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.36 W | |
| Power Dissipation-Max (Abs) | 0.58 W | |
| Reference Standard | ESA/SCC 5201/019; RH - 100K Rad(Si) | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 0.2 V |