Part Details for 2N5551RLRA by onsemi
Results Overview of 2N5551RLRA by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
2N5551RLRA Information
2N5551RLRA by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N5551RLRA
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Small Signal Bipolar Transistor, 0.6A, 160V, NPN, TO-92 RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 3636 |
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$0.0328 / $0.0529 | Buy Now |
Part Details for 2N5551RLRA
2N5551RLRA CAD Models
2N5551RLRA Part Data Attributes
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2N5551RLRA
onsemi
Buy Now
Datasheet
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Compare Parts:
2N5551RLRA
onsemi
600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-92 | |
| Package Description | CASE 29-11, TO-226AA, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 29-11 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 0.6 A | |
| Collector-Emitter Voltage-Max | 160 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 30 | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.35 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 100 MHz |
Alternate Parts for 2N5551RLRA
This table gives cross-reference parts and alternative options found for 2N5551RLRA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N5551RLRA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 2N5551BU | onsemi | $0.0683 | Small Signal NPN Bipolar Transistor, TO-92-3, 10000-BLKBG | 2N5551RLRA vs 2N5551BU |
| 2N5551STZ | Diodes Incorporated | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 | 2N5551RLRA vs 2N5551STZ |
| 2N5551 | Vishay Intertechnologies | Check for Price | Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-92, PLASTIC, CASE CT, 3 PIN | 2N5551RLRA vs 2N5551 |
| 2N5551 | Fairchild Semiconductor Corporation | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN | 2N5551RLRA vs 2N5551 |
| 2N5551BU | Fairchild Semiconductor Corporation | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3 | 2N5551RLRA vs 2N5551BU |
| 2N5551 | Motorola Semiconductor Products | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA, TO-226AA, 3 PIN | 2N5551RLRA vs 2N5551 |
| 2N5551 | Motorola Mobility LLC | Check for Price | 600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, TO-226AA, 3 PIN | 2N5551RLRA vs 2N5551 |
| 2N5551_J61Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3 | 2N5551RLRA vs 2N5551_J61Z |
| 2N5551 | Texas Instruments | Check for Price | 600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | 2N5551RLRA vs 2N5551 |
2N5551RLRA Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the 2N5551RLRA is a standard SOT-23 package with a 1.3mm x 1.3mm body size and 0.5mm lead pitch. A recommended land pattern can be found in the onsemi packaging documentation.
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To ensure reliable operation of the 2N5551RLRA in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive PCB material, and minimizing power dissipation. Additionally, the device should be operated within its recommended temperature range of -55°C to 150°C.
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The maximum safe operating area (SOA) for the 2N5551RLRA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA can be approximated by the device's maximum power dissipation (PD) and maximum junction temperature (TJ). For the 2N5551RLRA, PD = 625 mW and TJ = 150°C.
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While the 2N5551RLRA can be used as a switch, it is not recommended for high-frequency applications due to its relatively high transition frequency (ft) of 100 MHz. For high-frequency switching applications, a transistor with a higher ft and lower capacitance is recommended.
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The 2N5551RLRA has a human body model (HBM) ESD rating of 2 kV and a machine model (MM) ESD rating of 200 V. To ensure ESD protection, it is recommended to follow proper handling and storage procedures, such as using ESD-safe materials, grounding personnel, and using ESD protection devices such as TVS diodes or ESD arrays.