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Small Signal Field-Effect Transistor
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2N5459 by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
18C9216
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Newark | Rf Jfet, N Channel, 15V, To-92, Channel Type:N Channel, Drain Source Voltage Vds:15V, Continuous Drain Current Id:16Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:-, Gate Source Threshold Voltage Max:-, No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi 2N5459 RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
2N5459
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Avnet Americas | - Bulk (Alt: 2N5459) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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RFQ |
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2N5459
onsemi
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Datasheet
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2N5459
onsemi
Small Signal Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Date Of Intro | 2017-03-17 | |
Samacsys Manufacturer | onsemi | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
The maximum safe operating area (SOA) for the 2N5459 is not explicitly stated in the datasheet. However, it is generally recommended to operate the transistor within the specified voltage and current ratings to ensure reliable operation. Consult the application notes or contact onsemi support for more information.
To ensure the 2N5459 is properly biased for linear operation, follow these guidelines: 1) Choose a suitable collector-emitter voltage (Vce) and collector current (Ic) based on the application requirements. 2) Select a base-emitter voltage (Vbe) that provides the desired current gain. 3) Ensure the base current (Ib) is sufficient to maintain the desired collector current. 4) Use a suitable biasing network, such as a voltage divider or current mirror, to establish the desired operating point.
The recommended storage temperature range for the 2N5459 is -55°C to 150°C. However, it's essential to follow proper storage and handling procedures to prevent damage or degradation of the device.
Yes, the 2N5459 can be used as a switch. However, consider the following: 1) Ensure the transistor is properly biased to minimize switching losses. 2) Choose a suitable switching frequency based on the application requirements. 3) Consider the transistor's turn-on and turn-off times, as well as the associated voltage and current transients. 4) Ensure the transistor is properly heat-sinked to prevent overheating.
To handle ESD protection when working with the 2N5459, follow these guidelines: 1) Use an ESD-protected workstation or mat. 2) Ground yourself using a wrist strap or other ESD protection device. 3) Handle the transistor by the body or leads, avoiding direct contact with the die. 4) Use ESD-protected packaging and storage materials.