Part Details for 2N5322 by Comset Semiconductor
Results Overview of 2N5322 by Comset Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
2N5322 Information
2N5322 by Comset Semiconductor is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N5322
2N5322 CAD Models
2N5322 Part Data Attributes
|
|
2N5322
Comset Semiconductor
Buy Now
Datasheet
|
Compare Parts:
2N5322
Comset Semiconductor
Transistor
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | COMSET SEMICONDUCTORS | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 2 A | |
| Collector-Emitter Voltage-Max | 75 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 10 | |
| JEDEC-95 Code | TO-39 | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 1 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 1 W | |
| Power Dissipation-Max (Abs) | 10 W | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 50 MHz | |
| Turn-off Time-Max (toff) | 1000 ns | |
| Turn-on Time-Max (ton) | 100 ns | |
| VCEsat-Max | 0.7 V |