Part Details for 2N5195 by STMicroelectronics
Results Overview of 2N5195 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N5195 Information
2N5195 by STMicroelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N5195
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 600 |
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RFQ | ||
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for 2N5195
2N5195 CAD Models
2N5195 Part Data Attributes
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2N5195
STMicroelectronics
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Datasheet
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2N5195
STMicroelectronics
4A, 80V, PNP, Si, POWER TRANSISTOR, TO-126, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | SIP | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 4 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 7 | |
| JEDEC-95 Code | TO-126 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 40 W | |
| Power Dissipation-Max (Abs) | 40 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 2 MHz | |
| VCEsat-Max | 1.2 V |
Alternate Parts for 2N5195
This table gives cross-reference parts and alternative options found for 2N5195. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N5195, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N5195 | Space Power Electronics Inc | Check for Price | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126VAR, 3 PIN | 2N5195 vs 2N5195 |
| 2N5195 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, | 2N5195 vs 2N5195 |
| 2N5195 | International Devices Inc | Check for Price | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126VAR, 3 PIN | 2N5195 vs 2N5195 |
| 2N5195 | Hi-Tron Semiconductor Corp | Check for Price | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126VAR, 3 PIN | 2N5195 vs 2N5195 |
2N5195 Frequently Asked Questions (FAQ)
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The 2N5195 is a general-purpose NPN transistor, and its maximum operating frequency is not explicitly stated in the datasheet. However, based on its transition frequency (fT) of 300 MHz, it is suitable for low-to-medium frequency applications, such as audio amplifiers, switches, and general-purpose amplification.
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To ensure the 2N5195 transistor is properly biased for linear operation, you should provide a stable voltage supply, choose a suitable collector resistor, and set the base-emitter voltage (VBE) to around 0.7 V. You can use a voltage divider circuit to set the base voltage and a collector resistor to limit the collector current.
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The maximum power dissipation of the 2N5195 transistor is 625 mW, as stated in the datasheet. You should ensure that the transistor does not exceed this power rating to prevent overheating and damage.
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Yes, the 2N5195 transistor can be used as a switch. To do so, you should apply a base-emitter voltage (VBE) of around 0.7 V to turn the transistor on, and remove the base voltage to turn it off. You can use a resistor-capacitor (RC) circuit to filter out noise and ensure clean switching.
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To protect the 2N5195 transistor from electrostatic discharge (ESD), you should handle the device by the body, avoid touching the pins, and use an anti-static wrist strap or mat. You can also use ESD protection devices, such as diodes or resistors, in your circuit design.