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Part Details for 2N5191G by onsemi
Results Overview of 2N5191G by onsemi
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
2N5191G Information
2N5191G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N5191G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
59M4754
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Newark | Bipolar (Bjt) Single Transistor, Npn, 60 V, 2 Mhz, 40 W, 4 A, 2 Rohs Compliant: Yes |Onsemi 2N5191G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 662 |
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$0.4410 / $0.4810 | Buy Now |
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DISTI #
2N5191GOS-ND
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DigiKey | TRANS NPN 60V 4A TO-126 Min Qty: 1 Lead time: 8 Weeks Container: Bulk |
2328 In Stock |
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$0.3215 / $1.4000 | Buy Now |
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DISTI #
2N5191G
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Avnet Americas | Trans GP BJT NPN 60V 4A 3-Pin TO-225AA Box - Bulk (Alt: 2N5191G) RoHS: Compliant Min Qty: 500 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 1019500 Factory Stock |
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$0.3056 / $0.3291 | Buy Now |
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DISTI #
59M4754
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Avnet Americas | Trans GP BJT NPN 60V 4A 3-Pin TO-225AA Box - Bulk (Alt: 59M4754) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 22 Weeks, 4 Days Container: Bulk | 662 Partner Stock |
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$0.5140 / $0.9230 | Buy Now |
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DISTI #
863-2N5191G
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Mouser Electronics | Bipolar Transistors - BJT 4A 60V 40W NPN RoHS: Compliant | 27521 |
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$0.3430 / $1.0400 | Buy Now |
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DISTI #
V99:2348_07322476
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Arrow Electronics | Trans GP BJT NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2345 | Americas - 1840 |
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$0.3258 / $0.4842 | Buy Now |
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DISTI #
V36:1790_07322476
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Arrow Electronics | Trans GP BJT NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2445 | Americas - 1595 |
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$0.3077 / $1.0099 | Buy Now |
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DISTI #
V79:2366_29315855
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Arrow Electronics | Trans GP BJT NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box Min Qty: 1 Package Multiple: 1 Date Code: 2012 | Americas - 15 |
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$0.3067 / $0.7179 | Buy Now |
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Onlinecomponents.com | 4.0 A, 60 V NPN Bipolar Power Transistor RoHS: Compliant |
1500 In Stock |
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$0.3106 / $0.4361 | Buy Now |
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DISTI #
85246234
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Verical | Trans GP BJT NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box Min Qty: 18 Package Multiple: 1 Date Code: 2345 | Americas - 1840 |
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$0.4842 | Buy Now |
Part Details for 2N5191G
2N5191G CAD Models
2N5191G Part Data Attributes
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2N5191G
onsemi
Buy Now
Datasheet
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Compare Parts:
2N5191G
onsemi
4.0 A, 60 V NPN Bipolar Power Transistor, TO-225, 500-BLKBX
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-225 | |
| Package Description | CASE 77-09, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 77-09 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 22 Weeks, 4 Days | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 4 A | |
| Collector-Emitter Voltage-Max | 60 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 10 | |
| JEDEC-95 Code | TO-225AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 40 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 2 MHz |
Alternate Parts for 2N5191G
This table gives cross-reference parts and alternative options found for 2N5191G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N5191G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N5191 | General Transistor Corp | Check for Price | Power Bipolar Transistor, 4A I(C), NPN | 2N5191G vs 2N5191 |
2N5191G Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the 2N5191G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.
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To ensure the 2N5191G is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is between 0.6V to 0.8V, and the collector-emitter voltage (Vce) is at least 1V to 2V higher than the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
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The recommended heatsink design for the 2N5191G depends on the specific application and power dissipation requirements. However, as a general guideline, a heatsink with a thermal resistance of 10°C/W or lower is recommended. The heatsink should also be designed to provide good thermal contact with the device, and should be mounted using a thermally conductive interface material.
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Yes, the 2N5191G can be used as a switch, but it is not recommended due to its relatively low current gain (hFE) and high saturation voltage (Vce(sat)). The device is better suited for linear amplifier applications. If you must use it as a switch, ensure that the base drive is sufficient to saturate the device, and be aware of the potential for slow switching times and high power losses.
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To protect the 2N5191G from electrostatic discharge (ESD), handle the device by the body, not the leads, and use an anti-static wrist strap or mat. Ensure that the device is stored in an anti-static bag or tube, and avoid touching the device's leads or pins. Additionally, use ESD-protected workstations and tools, and follow proper ESD handling procedures.