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4.0 A, 60 V NPN Bipolar Power Transistor, TO-225, 500-BLKBX
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N5191 by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,BJT,NPN,60V V(BR)CEO,4A I(C),SOT-32 | 340 |
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$0.2800 / $0.6000 | Buy Now |
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2N5191
onsemi
Buy Now
Datasheet
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2N5191
onsemi
4.0 A, 60 V NPN Bipolar Power Transistor, TO-225, 500-BLKBX
|
Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-225 | |
Package Description | CASE 77-09, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 77-09 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | onsemi | |
Collector Current-Max (IC) | 4 A | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
JEDEC-95 Code | TO-225AA | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 140 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 40 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 2 MHz |
This table gives cross-reference parts and alternative options found for 2N5191. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N5191, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
2N5191 | National Semiconductor Corporation | Check for Price | TRANSISTOR NPN, Si, POWER TRANSISTOR, TO-126, TO-126, 3 PIN, BIP General Purpose Power | 2N5191 vs 2N5191 |
2N5191 | Rochester Electronics LLC | Check for Price | 4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225AA, CASE 77-09, 3 PIN | 2N5191 vs 2N5191 |
The maximum safe operating area (SOA) for the 2N5191 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device to a maximum power dissipation of 1.5W at 25°C, and to ensure that the voltage and current ratings are not exceeded.
To ensure reliable operation of the 2N5191 in high-temperature environments, it is essential to consider the device's thermal characteristics, such as the junction-to-case thermal resistance (RθJC) and the maximum junction temperature (Tj). Ensure that the device is properly heat-sinked, and that the ambient temperature is within the recommended operating range.
The recommended storage temperature range for the 2N5191 is -55°C to 150°C. Storing the device outside of this range may affect its reliability and performance.
While the 2N5191 can be used as a switch, it is not ideal for high-frequency applications due to its relatively high transition frequency (fT) of 30 MHz. For high-frequency applications, a transistor with a higher fT rating is recommended.
To prevent thermal runaway in a 2N5191-based circuit, ensure that the device is properly heat-sinked, and that the circuit is designed to prevent excessive current flow. Additionally, consider using thermal protection devices, such as thermistors or thermal fuses, to detect and respond to overheating conditions.