Part Details for 2N4900 by Microchip Technology Inc
Results Overview of 2N4900 by Microchip Technology Inc
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
2N4900 Information
2N4900 by Microchip Technology Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N4900
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
33AJ0789
|
Newark | Power Bjt To-66 Rohs Compliant: Yes |Microchip 2N4900 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$36.9100 / $38.3900 | Buy Now |
|
DISTI #
2N4900-ND
|
DigiKey | NPN SILICON TRANSISTOR Min Qty: 100 Lead time: 36 Weeks Container: Bulk | Temporarily Out of Stock |
|
$38.3902 | Buy Now |
|
DISTI #
2N4900
|
Avnet Americas | Trans GP BJT PNP 80V 1A 3-Pin(2+Tab) TO-66 - Bulk (Alt: 2N4900) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 36 Weeks, 0 Days Container: Bulk | 0 |
|
$34.5696 / $36.9125 | Buy Now |
|
DISTI #
494-2N4900
|
Mouser Electronics | Bipolar Transistors - BJT Power BJT RoHS: Not Compliant | 0 |
|
$41.3200 | Order Now |
|
DISTI #
2N4900
|
Microchip Technology Inc | Power BJT _ TO-66, Projected EOL: 2049-02-05 COO: Philippines ECCN: EAR99 Lead time: 36 Weeks, 0 Days |
70 Alternates Available |
|
$41.3200 | Buy Now |
|
|
Onlinecomponents.com | Transistor - PNP Silicon - Medium Power - 80V - 1A - 3 MHz RoHS: Compliant | 70 Factory Stock |
|
$36.6600 / $100.4000 | Buy Now |
|
|
NAC | Power BJT RoHS: Compliant Min Qty: 8 Package Multiple: 1 Container: Tray | 0 |
|
$36.0100 / $42.1900 | Buy Now |
|
|
NexGen Digital | 32 |
|
RFQ | ||
|
|
Master Electronics | Transistor - PNP Silicon - Medium Power - 80V - 1A - 3 MHz RoHS: Compliant | 70 Factory Stock |
|
$36.6600 / $100.4000 | Buy Now |
Part Details for 2N4900
2N4900 CAD Models
2N4900 Part Data Attributes
|
|
2N4900
Microchip Technology Inc
Buy Now
Datasheet
|
Compare Parts:
2N4900
Microchip Technology Inc
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin
|
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 36 Weeks | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| DC Current Gain-Min (hFE) | 20 | |
| JEDEC-95 Code | TO-66 | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Terminals | 2 | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | PNP | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N4900
This table gives cross-reference parts and alternative options found for 2N4900. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N4900, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N4900XR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 4A, 80V, PNP, Si, POWER TRANSISTOR, TO-66 | 2N4900 vs 2N4900XR1 |
| 2N4900 | Hi-Tron Semiconductor Corp | Check for Price | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N4900 vs 2N4900 |
| 2N4900X | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 4A, 80V, PNP, Si, POWER TRANSISTOR, TO-66 | 2N4900 vs 2N4900X |
| 2N4900 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin | 2N4900 vs 2N4900 |
| 2N4900 | Crimson Semiconductor Inc | Check for Price | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, | 2N4900 vs 2N4900 |
| 2N4900 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N4900 vs 2N4900 |
| 2N4900 | Semitronics Corp | Check for Price | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N4900 vs 2N4900 |
| 2N4900 | Advanced Semiconductor Inc | Check for Price | Power Bipolar Transistor, 1A I(C), 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N4900 vs 2N4900 |
2N4900 Frequently Asked Questions (FAQ)
-
The 2N4900 is a general-purpose N-channel power MOSFET, and its maximum operating frequency is not explicitly stated in the datasheet. However, based on its switching characteristics, it is suitable for applications up to 100 kHz.
-
To ensure safe operating area (SOA) for the 2N4900, follow the guidelines in the datasheet for voltage and current ratings, and also consider the device's thermal characteristics, such as junction temperature and thermal resistance. Additionally, use a suitable heat sink and ensure proper PCB layout to minimize thermal impedance.
-
Yes, the 2N4900 can be used as a switch in a high-side configuration, but you need to ensure that the gate-source voltage (Vgs) is within the recommended range (typically 10-15V) to maintain a low Rds(on) and prevent latch-up. Also, consider using a gate driver or a bootstrap circuit to provide the necessary gate voltage.
-
The 2N4900 has built-in ESD protection, but it's still important to follow proper handling and assembly procedures to prevent ESD damage. Use ESD-safe materials, tools, and equipment, and consider adding external ESD protection devices, such as TVS diodes or ESD arrays, to the circuit if necessary.
-
The recommended gate resistor value for the 2N4900 depends on the specific application and the desired switching speed. A typical value is around 10-100 ohms, but it may need to be adjusted based on the gate driver output impedance, the PCB layout, and the desired rise and fall times.