Datasheets
2N4393 by:

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA, HERMETIC SEALED, TO-18, 3 PIN

Part Details for 2N4393 by Vishay Intertechnologies

Results Overview of 2N4393 by Vishay Intertechnologies

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2N4393 Information

2N4393 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N4393

Part # Distributor Description Stock Price Buy
DISTI # 13C1991
Newark N Channel Jfet, -55V, To-206Aa, Gate Source Breakdown Voltage Max:-40V, Zero Gate Voltage Drain Current Max:30Ma, Gate Source Cutoff Voltage Max:-3V, No. Of Pins:3 Pin, Operating Temperature Max:200°C, Channel Type:N Channel Rohs Compliant: No |Vishay 2N4393 RoHS: Not Compliant Min Qty: 200 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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Part Details for 2N4393

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2N4393 Part Data Attributes

2N4393 Vishay Intertechnologies
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2N4393 Vishay Intertechnologies Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA, HERMETIC SEALED, TO-18, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HERMETIC SEALED, TO-18, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Vishay
Additional Feature LOW INSERTION LOSS
Case Connection GATE
Configuration SINGLE
Drain-source On Resistance-Max 100 Ω
FET Technology JUNCTION
Feedback Cap-Max (Crss) 3.5 pF
JEDEC-95 Code TO-206AA
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 200 °C
Operating Temperature-Min -55 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.8 W
Power Dissipation-Max (Abs) 1.8 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2N4393

This table gives cross-reference parts and alternative options found for 2N4393. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N4393, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N4393 Micro Electronics Ltd Check for Price Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, 2N4393 vs 2N4393
2N4393 National Semiconductor Corporation Check for Price TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, FET General Purpose Small Signal 2N4393 vs 2N4393
2N4393 NEC Electronics America Inc Check for Price Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, 2N4393 vs 2N4393
2N4393 Calogic Inc Check for Price Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, 2N4393 vs 2N4393
Part Number Manufacturer Composite Price Description Compare
2N4393 Crimson Semiconductor Inc Check for Price Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN 2N4393 vs 2N4393
2N4393 NXP Semiconductors Check for Price TRANSISTOR 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, METAL PACKAGE-3, FET General Purpose Small Signal 2N4393 vs 2N4393
2N4393 NEC Electronics Group Check for Price Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, 2N4393 vs 2N4393
2N4393-E3 Vishay Intertechnologies Check for Price Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA, LEAD FREE, HERMETIC SEALED, TO-18, 3 PIN 2N4393 vs 2N4393-E3
2N4393 Advanced Semiconductor Inc Check for Price Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN 2N4393 vs 2N4393
2N4393 InterFET Corporation Check for Price Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 2N4393 vs 2N4393
2N4393 Space Power Electronics Inc Check for Price Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN 2N4393 vs 2N4393
2N4393 Central Semiconductor Corp Check for Price Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, 2N4393 vs 2N4393
2N4393 TT Electronics Power and Hybrid / Semelab Limited Check for Price Si, SMALL SIGNAL, FET, TO-18, METAL PACKAGE-3 2N4393 vs 2N4393
2N4393 Temic Semiconductors Check for Price Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA, 2N4393 vs 2N4393

2N4393 Related Parts

2N4393 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the 2N4393 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, power dissipation, and voltage ratings. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to operate the device within the specified maximum junction temperature (Tj) of 150°C.

  • To ensure the 2N4393 is properly biased for linear operation, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (Vbe) to around 0.7V, and the collector-emitter voltage (Vce) to a value that ensures the device operates within its linear region. Additionally, it's crucial to ensure the device is operated within its recommended operating conditions, including current and power dissipation limits.

  • The recommended storage and handling procedure for the 2N4393 involves storing the devices in their original packaging, away from direct sunlight, moisture, and extreme temperatures. It's also essential to handle the devices by the body, rather than the leads, to prevent damage and electrostatic discharge (ESD). Additionally, it's recommended to follow standard ESD precautions, such as using anti-static wrist straps and mats, to prevent damage during handling and assembly.

  • While the 2N4393 is primarily designed for linear applications, it can be used in switching applications with some caution. However, it's essential to ensure the device is operated within its recommended switching frequency, and that the switching waveform is carefully controlled to prevent excessive voltage and current stress. Additionally, the device's switching characteristics, such as its rise and fall times, should be carefully evaluated to ensure they meet the requirements of the specific application.

  • The recommended PCB layout and thermal management strategy for the 2N4393 involves using a thermally efficient PCB design, with a solid copper plane or thermal vias to dissipate heat. It's also essential to ensure the device is mounted on a heat sink or thermal interface material (TIM) to reduce thermal resistance. Additionally, the PCB layout should be designed to minimize thermal gradients and ensure good airflow around the device.

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