Part Details for 2N4393 by Vishay Intertechnologies
Results Overview of 2N4393 by Vishay Intertechnologies
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N4393 Information
2N4393 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N4393
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13C1991
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Newark | N Channel Jfet, -55V, To-206Aa, Gate Source Breakdown Voltage Max:-40V, Zero Gate Voltage Drain Current Max:30Ma, Gate Source Cutoff Voltage Max:-3V, No. Of Pins:3 Pin, Operating Temperature Max:200°C, Channel Type:N Channel Rohs Compliant: No |Vishay 2N4393 RoHS: Not Compliant Min Qty: 200 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for 2N4393
2N4393 CAD Models
2N4393 Part Data Attributes
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2N4393
Vishay Intertechnologies
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Datasheet
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2N4393
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA, HERMETIC SEALED, TO-18, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HERMETIC SEALED, TO-18, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | LOW INSERTION LOSS | |
Case Connection | GATE | |
Configuration | SINGLE | |
Drain-source On Resistance-Max | 100 Ω | |
FET Technology | JUNCTION | |
Feedback Cap-Max (Crss) | 3.5 pF | |
JEDEC-95 Code | TO-206AA | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.8 W | |
Power Dissipation-Max (Abs) | 1.8 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2N4393
This table gives cross-reference parts and alternative options found for 2N4393. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N4393, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N4393 | Micro Electronics Ltd | Check for Price | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, | 2N4393 vs 2N4393 |
2N4393 | National Semiconductor Corporation | Check for Price | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, FET General Purpose Small Signal | 2N4393 vs 2N4393 |
2N4393 | NEC Electronics America Inc | Check for Price | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, | 2N4393 vs 2N4393 |
2N4393 | Calogic Inc | Check for Price | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, | 2N4393 vs 2N4393 |
2N4393 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the 2N4393 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, power dissipation, and voltage ratings. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to operate the device within the specified maximum junction temperature (Tj) of 150°C.
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To ensure the 2N4393 is properly biased for linear operation, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (Vbe) to around 0.7V, and the collector-emitter voltage (Vce) to a value that ensures the device operates within its linear region. Additionally, it's crucial to ensure the device is operated within its recommended operating conditions, including current and power dissipation limits.
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The recommended storage and handling procedure for the 2N4393 involves storing the devices in their original packaging, away from direct sunlight, moisture, and extreme temperatures. It's also essential to handle the devices by the body, rather than the leads, to prevent damage and electrostatic discharge (ESD). Additionally, it's recommended to follow standard ESD precautions, such as using anti-static wrist straps and mats, to prevent damage during handling and assembly.
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While the 2N4393 is primarily designed for linear applications, it can be used in switching applications with some caution. However, it's essential to ensure the device is operated within its recommended switching frequency, and that the switching waveform is carefully controlled to prevent excessive voltage and current stress. Additionally, the device's switching characteristics, such as its rise and fall times, should be carefully evaluated to ensure they meet the requirements of the specific application.
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The recommended PCB layout and thermal management strategy for the 2N4393 involves using a thermally efficient PCB design, with a solid copper plane or thermal vias to dissipate heat. It's also essential to ensure the device is mounted on a heat sink or thermal interface material (TIM) to reduce thermal resistance. Additionally, the PCB layout should be designed to minimize thermal gradients and ensure good airflow around the device.