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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N4393 by InterFET Corporation is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
106-2N4393
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Mouser Electronics | JFETs JFET N-Channel -40V Low Noise RoHS: Compliant | 121 |
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$7.5300 / $11.8900 | Buy Now |
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2N4393
InterFET Corporation
Buy Now
Datasheet
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2N4393
InterFET Corporation
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18
|
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | INTER F E T CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | InterFET | |
Case Connection | GATE | |
Configuration | SINGLE | |
Drain-source On Resistance-Max | 100 Ω | |
FET Technology | JUNCTION | |
JEDEC-95 Code | TO-18 | |
JESD-30 Code | O-MBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.8 W | |
Power Dissipation-Max (Abs) | 1.8 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for 2N4393. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N4393, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N4393 | Micro Electronics Ltd | Check for Price | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, | 2N4393 vs 2N4393 |
2N4393 | National Semiconductor Corporation | Check for Price | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, FET General Purpose Small Signal | 2N4393 vs 2N4393 |
2N4393 | NEC Electronics America Inc | Check for Price | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, | 2N4393 vs 2N4393 |
2N4393 | Calogic Inc | Check for Price | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, | 2N4393 vs 2N4393 |
The maximum operating temperature range for the 2N4393 is -55°C to 150°C.
To ensure linear operation, the 2N4393 should be biased with a voltage source and a current-limiting resistor to set the desired drain current. The gate-source voltage should be set to around -2V to -4V to achieve a linear transfer characteristic.
The maximum power dissipation for the 2N4393 is 1W, and it is recommended to derate the power dissipation by 2.5mW/°C above 25°C to ensure reliable operation.
Yes, the 2N4393 can be used as a switch, but it is not recommended due to its relatively high gate-source voltage threshold (around -2V) and high drain-source resistance (around 100 ohms). A dedicated switch transistor like the 2N7000 or 2N3904 would be a better choice.
To protect the 2N4393 from ESD, it is recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-sensitive handling procedures. Additionally, the device should be stored in an anti-static bag or tube to prevent damage during storage and shipping.