Part Details for 2N4239 by Microsemi Corporation
Results Overview of 2N4239 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
2N4239 Information
2N4239 by Microsemi Corporation is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N4239
2N4239 CAD Models
2N4239 Part Data Attributes
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2N4239
Microsemi Corporation
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Datasheet
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2N4239
Microsemi Corporation
Transistor,
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | TO-39 | |
| Package Description | TO-39, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 30 | |
| JEDEC-95 Code | TO-39 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N4239
This table gives cross-reference parts and alternative options found for 2N4239. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N4239, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| JANTXV2N4239 | Cobham Semiconductor Solutions | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | 2N4239 vs JANTXV2N4239 |
| JAN2N4239 | Cobham Semiconductor Solutions | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | 2N4239 vs JAN2N4239 |
| JANTX2N4239 | New England Semiconductor | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | 2N4239 vs JANTX2N4239 |
| JANTX2N4239 | Cobham Semiconductor Solutions | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | 2N4239 vs JANTX2N4239 |
| JAN2N4239 | Cobham PLC | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | 2N4239 vs JAN2N4239 |
| JAN2N4239 | MACOM | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | 2N4239 vs JAN2N4239 |
| JAN2N4239 | Microsemi Corporation | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | 2N4239 vs JAN2N4239 |
2N4239 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the 2N4239 is -55°C to 150°C, although it can withstand storage temperatures up to 200°C.
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To ensure proper biasing, the 2N4239 requires a minimum of 10V between the anode and cathode, and a maximum of 100V. The recommended bias current is 10mA to 100mA.
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The maximum power dissipation of the 2N4239 is 1W, and it is recommended to derate the power dissipation by 2mW/°C above 25°C to prevent thermal runaway.
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Yes, the 2N4239 can be used in high-frequency applications up to 1GHz, but it is recommended to use a suitable package and layout to minimize parasitic inductance and capacitance.
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Yes, the 2N4239 is a radiation-hardened device, designed to withstand total ionizing dose (TID) effects and single-event effects (SEE) in harsh radiation environments.