Part Details for 2N4123 by Motorola Semiconductor Products
Results Overview of 2N4123 by Motorola Semiconductor Products
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
2N4123 Information
2N4123 by Motorola Semiconductor Products is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N4123
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 60 |
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Chip 1 Exchange | INSTOCK | 5000 |
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RFQ |
Part Details for 2N4123
2N4123 CAD Models
2N4123 Part Data Attributes
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2N4123
Motorola Semiconductor Products
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Datasheet
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2N4123
Motorola Semiconductor Products
Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-226AA, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | TO-226AA, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Collector Current-Max (IC) | 0.2 A | |
| Collector-Base Capacitance-Max | 4 pF | |
| Collector-Emitter Voltage-Max | 30 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 25 | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 1.5 W | |
| Power Dissipation-Max (Abs) | 0.35 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| VCEsat-Max | 0.3 V |
2N4123 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the 2N4123 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure reliable operation.
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To ensure the 2N4123 is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (Vbe) to around 0.7V and the collector-emitter voltage (Vce) to around 1-2V. You may also need to adjust the bias resistors to achieve the desired quiescent current.
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The maximum frequency of operation for the 2N4123 is not explicitly stated in the datasheet, but it can be estimated based on the device's transition frequency (fT) and current gain-bandwidth product (GBW). As a general rule, the 2N4123 can operate up to several hundred kHz, but the actual frequency limit will depend on the specific application and circuit design.
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To handle thermal management for the 2N4123, you should ensure that the device is properly mounted on a heat sink or PCB with adequate thermal conductivity. You should also follow the recommended thermal design guidelines outlined in the datasheet, including keeping the junction temperature (Tj) below the maximum rated value of 150°C.
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The 2N4123 has built-in ESD protection, but it's still important to follow proper ESD handling and storage procedures to prevent damage to the device. You should also ensure that the device is properly connected to a ground plane or ESD protection network to prevent electrostatic discharge.