Part Details for 2N3772 by STMicroelectronics
Results Overview of 2N3772 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N3772 Information
2N3772 by STMicroelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N3772
2N3772 CAD Models
2N3772 Part Data Attributes
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2N3772
STMicroelectronics
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Datasheet
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2N3772
STMicroelectronics
20A, 60V, NPN, Si, POWER TRANSISTOR, TO-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 20 A | |
| Collector-Emitter Voltage-Max | 60 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 5 | |
| JEDEC-95 Code | TO-3 | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 0.2 MHz | |
| VCEsat-Max | 4 V |
Alternate Parts for 2N3772
This table gives cross-reference parts and alternative options found for 2N3772. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3772, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 2N3772 | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | 2N3772 vs 2N3772 |
| 2N3772 | Microchip Technology Inc | Check for Price | Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | 2N3772 vs 2N3772 |
| JANTX2N3772 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, SIMILAR TO TO-3, 2 PIN | 2N3772 vs JANTX2N3772 |
| 2N3772 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-204AA, 2 PIN | 2N3772 vs 2N3772 |
| JAN2N3772 | New England Semiconductor | Check for Price | Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, SIMILAR TO TO-3, 2 PIN | 2N3772 vs JAN2N3772 |
| 2N3772 | Semitronics Corp | Check for Price | Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | 2N3772 vs 2N3772 |
| 2N3772 | Texas Instruments | Check for Price | 20A, 60V, NPN, Si, POWER TRANSISTOR, TO-3 | 2N3772 vs 2N3772 |
| JANTXV2N3772 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, SIMILAR TO TO-3, 2 PIN | 2N3772 vs JANTXV2N3772 |
| 2N3772 | onsemi | Check for Price | 20A, 60V, NPN, Si, POWER TRANSISTOR, TO-204AA, CASE 1-07, TO-3, 2 PIN | 2N3772 vs 2N3772 |
| JANTXV2N3772 | Microchip Technology Inc | Check for Price | Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin | 2N3772 vs JANTXV2N3772 |
2N3772 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the 2N3772 is not explicitly stated in the datasheet. However, STMicroelectronics recommends following the SOA curves provided in the application note AN1172, which provides guidelines for designing with high-power transistors like the 2N3772.
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To ensure the 2N3772 is properly biased for linear operation, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.65-0.7V and the collector-emitter voltage (VCE) to around 1-2V. Additionally, the base current should be limited to prevent overheating.
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The maximum power dissipation for the 2N3772 is dependent on the ambient temperature and the thermal resistance of the transistor. According to the datasheet, the maximum power dissipation is 150W at a case temperature of 25°C. However, this value can be derated based on the actual operating conditions.
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While the 2N3772 is primarily designed for linear applications, it can be used in switching applications with some caution. However, the transistor's switching characteristics, such as the turn-on and turn-off times, may not be optimized for high-frequency switching. It's essential to carefully evaluate the transistor's performance in the specific switching application and ensure it meets the required specifications.
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Thermal management is critical for the 2N3772, as it can operate at high power levels. Ensure proper heat sinking, such as using a heat sink with a thermal resistance of around 1-2°C/W, and maintain a low thermal resistance between the transistor and the heat sink. Additionally, consider using thermal interface materials and ensure good airflow around the transistor.