Part Details for 2N3767 by Microchip Technology Inc
Results Overview of 2N3767 by Microchip Technology Inc
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N3767 Information
2N3767 by Microchip Technology Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N3767
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33AJ0734
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Newark | 80V 4A Npn Power Bjt Tht To-66 Rohs Compliant: Yes |Microchip 2N3767 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$25.6400 / $26.6600 | Buy Now |
DISTI #
2N3767-ND
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DigiKey | TRANS NPN 80V 4A TO66 Min Qty: 100 Lead time: 36 Weeks Container: Bulk | Temporarily Out of Stock |
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$26.6601 | Buy Now |
DISTI #
2N3767
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Avnet Americas | Transistor GP BJT NPN 80V 4A 2-Pin TO-66 - Bulk (Alt: 2N3767) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 36 Weeks, 0 Days Container: Bulk | 0 |
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$24.0096 / $25.6375 | Buy Now |
DISTI #
2N3767
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Microchip Technology Inc | Power BJT _ TO-66, Projected EOL: 2049-02-05 COO: Philippines ECCN: EAR99 Lead time: 36 Weeks, 0 Days |
574 Alternates Available |
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$28.7100 | Buy Now |
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Onlinecomponents.com | Transistor - NPN Silicon - Medium Power - 80V - 4A - 4 MHz RoHS: Compliant | 574 Factory Stock |
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$25.4600 / $53.3300 | Buy Now |
DISTI #
2N3767
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IBS Electronics | 2N3767 by Microchip is a silicon NPN power transistor designed for high-speed switching applications, featuring a collector current of 16A, collector-emitter voltage of 60V, and power dissipation of 150W. Min Qty: 100 Package Multiple: 1 | 0 |
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$33.3320 | Buy Now |
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NAC | Power BJT RoHS: Compliant Min Qty: 12 Package Multiple: 1 Container: Tray | 0 |
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$25.0100 / $29.3000 | Buy Now |
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Master Electronics | Transistor - NPN Silicon - Medium Power - 80V - 4A - 4 MHz RoHS: Compliant | 574 Factory Stock |
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$25.4600 / $53.3300 | Buy Now |
Part Details for 2N3767
2N3767 CAD Models
2N3767 Part Data Attributes
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2N3767
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
2N3767
Microchip Technology Inc
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 36 Weeks | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 1 A | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
JEDEC-95 Code | TO-213AA | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 25 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 10 MHz |
Alternate Parts for 2N3767
This table gives cross-reference parts and alternative options found for 2N3767. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3767, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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JANTXV2N3767 | Microchip Technology Inc | $38.4187 | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin | 2N3767 vs JANTXV2N3767 |
2N3767 | Silicon Transistor Corporation | Check for Price | Power Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213, Metal, 2 Pin | 2N3767 vs 2N3767 |
2N3767 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N3767 vs 2N3767 |
2N3767 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin | 2N3767 vs 2N3767 |
2N3767 | Advanced Semiconductor Inc | Check for Price | Power Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N3767 vs 2N3767 |
JANTX2N3767 | Motorola Mobility LLC | Check for Price | 4A, 80V, NPN, Si, POWER TRANSISTOR, TO-66, 2 PIN | 2N3767 vs JANTX2N3767 |
JANTX2N3767 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN | 2N3767 vs JANTX2N3767 |
2N3767 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, | 2N3767 vs 2N3767 |
2N3767 | International Devices Inc | Check for Price | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N3767 vs 2N3767 |
2N3767 Frequently Asked Questions (FAQ)
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The recommended operating voltage range for the 2N3767 is 4.5V to 18V, although it can tolerate up to 20V for short periods.
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The 2N3767 has a thermal junction-to-case rating of 2°C/W. Ensure good thermal contact between the device and a heat sink, and consider using a thermal interface material to reduce thermal resistance.
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The maximum current rating for the 2N3767 is 1A continuous, although it can handle up to 2A peak current for short periods. Be sure to check the power dissipation and thermal management to avoid overheating.
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Handle the 2N3767 with ESD-safe materials and tools, and consider using ESD protection devices such as TVS diodes or ESD suppressors in the circuit design.
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Yes, the 2N3767 can be used in switching regulator applications, but be aware of its limited switching frequency (up to 100 kHz) and ensure that the device is properly biased and driven to avoid overheating and premature failure.