Datasheets
2N3767 by:

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin

Part Details for 2N3767 by Microchip Technology Inc

Results Overview of 2N3767 by Microchip Technology Inc

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Applications Industrial Automation Aerospace and Defense Energy and Power Systems Renewable Energy

2N3767 Information

2N3767 by Microchip Technology Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N3767

Part # Distributor Description Stock Price Buy
DISTI # 33AJ0734
Newark 80V 4A Npn Power Bjt Tht To-66 Rohs Compliant: Yes |Microchip 2N3767 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $26.6600
  • 500 $25.6400
$25.6400 / $26.6600 Buy Now
DISTI # 2N3767-ND
DigiKey TRANS NPN 80V 4A TO66 Min Qty: 100 Lead time: 36 Weeks Container: Bulk Temporarily Out of Stock
  • 100 $26.6601
$26.6601 Buy Now
DISTI # 2N3767
Avnet Americas Transistor GP BJT NPN 80V 4A 2-Pin TO-66 - Bulk (Alt: 2N3767) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 36 Weeks, 0 Days Container: Bulk 0
  • 100 $25.6375
  • 110 $25.2245
  • 210 $24.8155
  • 500 $24.4050
  • 1,000 $24.0096
$24.0096 / $25.6375 Buy Now
DISTI # 2N3767
Microchip Technology Inc Power BJT _ TO-66, Projected EOL: 2049-02-05 COO: Philippines ECCN: EAR99 Lead time: 36 Weeks, 0 Days 574

Alternates Available
  • 1 $28.7100
$28.7100 Buy Now
Onlinecomponents.com Transistor - NPN Silicon - Medium Power - 80V - 4A - 4 MHz RoHS: Compliant 574 Factory Stock
  • 25 $53.3300
  • 50 $32.8200
  • 75 $25.9800
  • 100 $25.4600
$25.4600 / $53.3300 Buy Now
DISTI # 2N3767
IBS Electronics 2N3767 by Microchip is a silicon NPN power transistor designed for high-speed switching applications, featuring a collector current of 16A, collector-emitter voltage of 60V, and power dissipation of 150W. Min Qty: 100 Package Multiple: 1 0
  • 100 $33.3320
$33.3320 Buy Now
NAC Power BJT RoHS: Compliant Min Qty: 12 Package Multiple: 1 Container: Tray 0
  • 1 $29.3000
  • 100 $26.9900
  • 500 $25.6400
  • 800 $25.0100
$25.0100 / $29.3000 Buy Now
Master Electronics Transistor - NPN Silicon - Medium Power - 80V - 4A - 4 MHz RoHS: Compliant 574 Factory Stock
  • 25 $53.3300
  • 50 $32.8200
  • 75 $25.9800
  • 100 $25.4600
$25.4600 / $53.3300 Buy Now

Part Details for 2N3767

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2N3767 Part Data Attributes

2N3767 Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
2N3767 Microchip Technology Inc Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 36 Weeks
Case Connection COLLECTOR
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JEDEC-95 Code TO-213AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 25 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 10 MHz

Alternate Parts for 2N3767

This table gives cross-reference parts and alternative options found for 2N3767. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3767, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
JANTXV2N3767 Microchip Technology Inc $38.4187 Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin 2N3767 vs JANTXV2N3767
2N3767 Silicon Transistor Corporation Check for Price Power Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213, Metal, 2 Pin 2N3767 vs 2N3767
2N3767 Central Semiconductor Corp Check for Price Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3767 vs 2N3767
2N3767 Motorola Semiconductor Products Check for Price Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin 2N3767 vs 2N3767
2N3767 Advanced Semiconductor Inc Check for Price Power Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3767 vs 2N3767
JANTX2N3767 Motorola Mobility LLC Check for Price 4A, 80V, NPN, Si, POWER TRANSISTOR, TO-66, 2 PIN 2N3767 vs JANTX2N3767
JANTX2N3767 Microsemi Corporation Check for Price Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN 2N3767 vs JANTX2N3767
2N3767 Microsemi Corporation Check for Price Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, 2N3767 vs 2N3767
2N3767 International Devices Inc Check for Price Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3767 vs 2N3767
Part Number Manufacturer Composite Price Description Compare
2N3767R1 TT Electronics Resistors Check for Price Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN 2N3767 vs 2N3767R1
2N3767 Vishay Semiconductors Check for Price Power Bipolar Transistor, 3A I(C), 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3767 vs 2N3767
2N3767 Cobham Semiconductor Solutions Check for Price Power Bipolar Transistor 2N3767 vs 2N3767
2N3766 Solitron Devices Inc Check for Price Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, 2N3767 vs 2N3766
JAN2N3766 Cobham Semiconductor Solutions Check for Price Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-213AA, 2 PIN 2N3767 vs JAN2N3766
JANTXV2N3767 Silicon Transistor Corporation Check for Price Power Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213, Metal, 2 Pin 2N3767 vs JANTXV2N3767
2N3766 General Diode Corp Check for Price Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3767 vs 2N3766
2N3767 Solid State Devices Inc (SSDI) Check for Price Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3767 vs 2N3767
2N3766 Central Semiconductor Corp Check for Price Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3767 vs 2N3766
2N3767 Semitronics Corp Check for Price Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3767 vs 2N3767

2N3767 Related Parts

2N3767 Frequently Asked Questions (FAQ)

  • The recommended operating voltage range for the 2N3767 is 4.5V to 18V, although it can tolerate up to 20V for short periods.

  • The 2N3767 has a thermal junction-to-case rating of 2°C/W. Ensure good thermal contact between the device and a heat sink, and consider using a thermal interface material to reduce thermal resistance.

  • The maximum current rating for the 2N3767 is 1A continuous, although it can handle up to 2A peak current for short periods. Be sure to check the power dissipation and thermal management to avoid overheating.

  • Handle the 2N3767 with ESD-safe materials and tools, and consider using ESD protection devices such as TVS diodes or ESD suppressors in the circuit design.

  • Yes, the 2N3767 can be used in switching regulator applications, but be aware of its limited switching frequency (up to 100 kHz) and ensure that the device is properly biased and driven to avoid overheating and premature failure.

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