Part Details for 2N3716 by Microsemi Corporation
Results Overview of 2N3716 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N3716 Information
2N3716 by Microsemi Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N3716
2N3716 CAD Models
2N3716 Part Data Attributes
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2N3716
Microsemi Corporation
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Datasheet
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2N3716
Microsemi Corporation
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin,
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | TO-3 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 10 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 50 | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 87.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 2.5 MHz |
Alternate Parts for 2N3716
This table gives cross-reference parts and alternative options found for 2N3716. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3716, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 2N3716 | General Diode Corp | Check for Price | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 3 PIN | 2N3716 vs 2N3716 |
| JANTX2N3716 | Motorola Mobility LLC | Check for Price | 10A, 80V, NPN, Si, POWER TRANSISTOR, TO-3 | 2N3716 vs JANTX2N3716 |
| 2N3716 | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN | 2N3716 vs 2N3716 |
| JANTX2N3716 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN | 2N3716 vs JANTX2N3716 |
| JANTX2N3716 | Raytheon Semiconductor | Check for Price | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-3, 2 PIN | 2N3716 vs JANTX2N3716 |
| 2N3716R1 | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN | 2N3716 vs 2N3716R1 |
| 2N3716 | Crimson Semiconductor Inc | Check for Price | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | 2N3716 vs 2N3716 |
| JANTX2N3716 | Spectrum Control | Check for Price | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | 2N3716 vs JANTX2N3716 |
| 2N3716 | Electronic Transistors Corp | Check for Price | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | 2N3716 vs 2N3716 |
| JANTX2N3716 | Sensitron Semiconductors | Check for Price | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-3, 2 PIN | 2N3716 vs JANTX2N3716 |
2N3716 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the 2N3716 is -55°C to 150°C, although it can withstand storage temperatures up to 200°C.
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To ensure proper biasing, the 2N3716 requires a Vcc supply voltage between 3V and 15V, and a Vee supply voltage between -3V and -15V. The recommended bias current is 10mA to 50mA.
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The maximum power dissipation for the 2N3716 is 1.5W, and it is recommended to derate the power dissipation by 12mW/°C above 25°C to prevent thermal overload.
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Yes, the 2N3716 can be used in high-frequency applications up to 1GHz, but it is recommended to use a decoupling capacitor between the Vcc and Vee pins to minimize noise and ensure stable operation.
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Yes, the 2N3716 is a radiation-hardened device, designed to withstand total ionizing dose (TID) effects and single-event effects (SEE) in harsh radiation environments.