Part Details for 2N3583 by NTE Electronics Inc
Results Overview of 2N3583 by NTE Electronics Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2N3583 Information
2N3583 by NTE Electronics Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N3583
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33C8248
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Newark | Transistor, Npn, 175V, Transistor Polarity:Npn, Collector Emitter Voltage Max:175V, Continuous Collector Current:1A, Power Dissipation:35W, Transistor Mounting:Through Hole, No. Of Pins:2Pins, Transition Frequency:20Mhz, Msl:- Rohs Compliant: Yes |Nte Electronics 2N3583 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for 2N3583
2N3583 CAD Models
2N3583 Part Data Attributes
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2N3583
NTE Electronics Inc
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Datasheet
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2N3583
NTE Electronics Inc
T-NPN SI- HIV PO RoHS Compliant: Yes
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | NTE ELECTRONICS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Emitter Voltage-Max | 175 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 10 | |
| JEDEC-95 Code | TO-66 | |
| JESD-30 Code | O-MBFM-P2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 35 W | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 5 V |
2N3583 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N3583 is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate the transistor within a temperature range of -40°C to 125°C for optimal performance and reliability.
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Yes, the 2N3583 can be used as a switch, but it's not recommended due to its relatively low current gain (hFE) and high saturation voltage (Vce(sat)). The transistor is better suited for amplifier applications where high current gain and low saturation voltage are not critical.
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The maximum collector-emitter voltage (Vce) that can be applied to the 2N3583 is 30V, as specified in the datasheet. Exceeding this voltage may result in transistor failure or reduced reliability.
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The 2N3583 is not suitable for high-frequency applications due to its relatively low transition frequency (fT) of 100 MHz. For high-frequency applications, a transistor with a higher transition frequency is recommended.
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The recommended storage temperature range for the 2N3583 is -40°C to 125°C. Storage outside this temperature range may affect the transistor's performance and reliability.