Part Details for 2N3583 by Microchip Technology Inc
Results Overview of 2N3583 by Microchip Technology Inc
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N3583 Information
2N3583 by Microchip Technology Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N3583
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33AJ0710
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Newark | Power Bjt To-66 Rohs Compliant: Yes |Microchip 2N3583 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$25.2100 / $26.2200 | Buy Now |
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DISTI #
2N3583MS-ND
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DigiKey | TRANS NPN 175V 1A TO66 Min Qty: 100 Lead time: 36 Weeks Container: Bulk | Temporarily Out of Stock |
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$26.2202 | Buy Now |
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DISTI #
2N3583
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Avnet Americas | Transistor GP BJT NPN 175V 1A 2-Pin TO-66 - Bulk (Alt: 2N3583) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 36 Weeks, 0 Days Container: Bulk | 0 |
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$23.6160 / $25.2125 | Buy Now |
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DISTI #
2N3583
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Microchip Technology Inc | Power BJT _ TO-66, Projected EOL: 2049-02-05 COO: Philippines ECCN: EAR99 Lead time: 36 Weeks, 0 Days |
0 Alternates Available |
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$28.2400 | Buy Now |
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Onlinecomponents.com | Transistor - NPN Silicon - Medium Power - 175V - 1A - RoHS: Compliant | 0 |
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$25.0400 / $52.4400 | Buy Now |
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NAC | Power BJT RoHS: Compliant Min Qty: 12 Package Multiple: 1 Container: Tray | 0 |
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$24.6000 / $28.8100 | Buy Now |
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ES Components | Microsemi 2N3583 BARE DIE | 400 in Stock |
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RFQ | |
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Master Electronics | Transistor - NPN Silicon - Medium Power - 175V - 1A - RoHS: Compliant | 0 |
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$25.0400 / $52.4400 | Buy Now |
Part Details for 2N3583
2N3583 CAD Models
2N3583 Part Data Attributes
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2N3583
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
2N3583
Microchip Technology Inc
Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 36 Weeks | |
| Additional Feature | HIGH RELIABILITY | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Emitter Voltage-Max | 175 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 10 | |
| JEDEC-95 Code | TO-66 | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 35 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 10 MHz |
Alternate Parts for 2N3583
This table gives cross-reference parts and alternative options found for 2N3583. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3583, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N3583.MODR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN | 2N3583 vs 2N3583.MODR1 |
| 2N3583 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, | 2N3583 vs 2N3583 |
| 2N3583 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N3583 vs 2N3583 |
| 2N3583 | Solitron Devices Inc | Check for Price | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N3583 vs 2N3583 |
| 2N3583 | Hi-Tron Semiconductor Corp | Check for Price | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N3583 vs 2N3583 |
| 2N3583 | Semiconductor Technology Inc | Check for Price | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N3583 vs 2N3583 |
| 2N3583 | Spectrum Control | Check for Price | Power Bipolar Transistor, 5A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, | 2N3583 vs 2N3583 |
| 2N3583 | Swampscott Electronics Co Inc | Check for Price | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N3583 vs 2N3583 |
| 2N3583 | Advanced Semiconductor Inc | Check for Price | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | 2N3583 vs 2N3583 |
2N3583 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the 2N3583 is -55°C to +150°C, although the device can function up to +200°C with reduced performance.
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To ensure proper biasing, the 2N3583 requires a minimum of 10V between the collector and emitter, and a base-emitter voltage of around 0.7V. Additionally, the base current should be limited to 5mA to prevent overheating.
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The 2N3583 can handle a maximum collector current of 1A, and a peak current of 2A for short durations (less than 100ms). Exceeding these limits can lead to device damage or failure.
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To protect the 2N3583 from ESD, handle the device with anti-static wrist straps, mats, or bags. Avoid touching the device's pins or leads, and use ESD-safe tools and equipment during assembly and testing.
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Yes, the 2N3583 can be used as a switch, but it's essential to consider the device's saturation voltage, which can be around 0.5V. This may affect the overall circuit performance, and additional components may be required to ensure proper switching.