Part Details for 2N3467L by Microsemi Corporation
Results Overview of 2N3467L by Microsemi Corporation
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- Part Data Attributes: (Available)
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Applications
Consumer Electronics
Audio and Video Systems
2N3467L Information
2N3467L by Microsemi Corporation is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N3467L
2N3467L CAD Models
2N3467L Part Data Attributes
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2N3467L
Microsemi Corporation
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Datasheet
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2N3467L
Microsemi Corporation
Power Bipolar Transistor, 0.001A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | TO-5, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Base Capacitance-Max | 25 pF | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JEDEC-95 Code | TO-5 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 1 W | |
| Power Dissipation-Max (Abs) | 5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 175 MHz | |
| Turn-off Time-Max (toff) | 90 ns | |
| Turn-on Time-Max (ton) | 40 ns | |
| VCEsat-Max | 1.2 V |