Part Details for 2N3419 by VPT Components
Results Overview of 2N3419 by VPT Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
2N3419 Information
2N3419 by VPT Components is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N3419
2N3419 CAD Models
2N3419 Part Data Attributes
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2N3419
VPT Components
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Datasheet
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2N3419
VPT Components
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VPT COMPONENTS | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 3 A | |
| Collector-Base Capacitance-Max | 150 pF | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 10 | |
| Fall Time-Max (tf) | 200 ns | |
| JEDEC-95 Code | TO-5 | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 1 W | |
| Power Dissipation-Max (Abs) | 5 W | |
| Rise Time-Max (tr) | 220 ns | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 1300 ns | |
| Turn-on Time-Max (ton) | 300 ns | |
| VCEsat-Max | 0.5 V |