Datasheets
2N3391A by:

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

Part Details for 2N3391A by Central Semiconductor Corp

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2N3391A Information

2N3391A by Central Semiconductor Corp is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N3391A

Part # Distributor Description Stock Price Buy
DISTI # 2N3391A
Avnet Americas Bipolar Transistors - BJT NPN Transistor General Purpose - Boxed Product (Development Kits) (Alt: 2N3391A) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Box 0
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Part Details for 2N3391A

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2N3391A Part Data Attributes

2N3391A Central Semiconductor Corp
Buy Now Datasheet
Compare Parts:
2N3391A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP
Part Package Code TO-92
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer Central Semiconductor
JESD-609 Code e0
Qualification Status Not Qualified
Terminal Finish TIN LEAD

2N3391A Related Parts

2N3391A Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the 2N3391A is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate the transistor within a temperature range of -40°C to 125°C for optimal performance and reliability.

  • While the 2N3391A can be used as a switch, it's not ideal for high-frequency applications due to its relatively high transition frequency (fT) of 100 MHz. For high-frequency applications, consider using a transistor with a higher fT, such as the 2N3904 or 2N2222.

  • To ensure proper biasing for linear amplifier applications, follow these guidelines: 1) Choose a collector-emitter voltage (VCE) that is at least 2-3 times the maximum output voltage swing. 2) Select a base-emitter voltage (VBE) that is within the recommended range (typically 0.6-0.8 V). 3) Use a resistor network to establish a stable quiescent point. 4) Verify the transistor's operating point using a load line analysis or simulation tools.

  • The maximum power dissipation for the 2N3391A is 625 mW, as specified in the datasheet. However, this value can be derated based on the operating temperature and package type. Always check the datasheet and perform thermal calculations to ensure the transistor is operated within its safe operating area.

  • Yes, the 2N3391A can be used in a Darlington pair configuration to increase the current gain and improve the overall performance of the amplifier. However, be aware that the Darlington pair configuration will increase the overall voltage drop and reduce the maximum collector-emitter voltage rating.

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