Part Details for 2N2907APBFREE by Central Semiconductor Corp
Results Overview of 2N2907APBFREE by Central Semiconductor Corp
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
2N2907APBFREE Information
2N2907APBFREE by Central Semiconductor Corp is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N2907APBFREE
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 5818 |
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RFQ |
Part Details for 2N2907APBFREE
2N2907APBFREE CAD Models
2N2907APBFREE Part Data Attributes
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2N2907APBFREE
Central Semiconductor Corp
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Datasheet
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2N2907APBFREE
Central Semiconductor Corp
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Date Of Intro | 2017-05-30 | |
| Collector Current-Max (IC) | 0.6 A | |
| Collector-Base Capacitance-Max | 8 pF | |
| Collector-Emitter Voltage-Max | 60 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 50 | |
| JEDEC-95 Code | TO-18 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 0.4 W | |
| Power Dissipation-Max (Abs) | 1.8 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 200 MHz | |
| Turn-off Time-Max (toff) | 100 ns | |
| Turn-on Time-Max (ton) | 45 ns | |
| VCEsat-Max | 1.6 V |