Part Details for 2N2907ACSM4R by TT Electronics Resistors
Results Overview of 2N2907ACSM4R by TT Electronics Resistors
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
2N2907ACSM4R Information
2N2907ACSM4R by TT Electronics Resistors is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N2907ACSM4R
2N2907ACSM4R CAD Models
2N2907ACSM4R Part Data Attributes
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2N2907ACSM4R
TT Electronics Resistors
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Datasheet
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2N2907ACSM4R
TT Electronics Resistors
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, MO-041BA, HERMETIC SEALED, LCC3-4
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TT ELECTRONICS PLC | |
| Package Description | SMALL OUTLINE, R-PDSO-N4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Collector Current-Max (IC) | 0.6 A | |
| Collector-Emitter Voltage-Max | 60 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 50 | |
| JEDEC-95 Code | MO-041BA | |
| JESD-30 Code | R-PDSO-N4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 0.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 200 MHz | |
| Turn-off Time-Max (toff) | 300 ns | |
| Turn-on Time-Max (ton) | 45 ns |