Part Details for 2N2609 by Microchip Technology Inc
Results Overview of 2N2609 by Microchip Technology Inc
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
2N2609 Information
2N2609 by Microchip Technology Inc is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N2609
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
36AJ2712
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Newark | 30V 10Ma 300Mw Jfet Tht To-18 Rohs Compliant: Yes |Microchip 2N2609 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$10.7300 / $11.1500 | Buy Now |
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DISTI #
2N2609MS-ND
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DigiKey | JFET P-CH 30V 10MA TO18 Min Qty: 100 Lead time: 24 Weeks Container: Bag | Temporarily Out of Stock |
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$11.1501 | Buy Now |
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DISTI #
2N2609
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Avnet Americas | Trans JFET P-CH 3-Pin TO-18 - Bulk (Alt: 2N2609) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Bulk | 0 |
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$10.0386 / $10.7250 | Buy Now |
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DISTI #
494-2N2609
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Mouser Electronics | JFETs 30V 10mA 300mW JFET THT RoHS: Not Compliant | 97 |
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$11.1500 / $12.0100 | Buy Now |
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DISTI #
VBF:5286_19043603
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Arrow Electronics | Trans JFET P-CH 3-Pin TO-18 Bag RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 24 Weeks Date Code: 2129 | Americas - 149 |
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$10.7490 | Buy Now |
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DISTI #
2N2609
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Microchip Technology Inc | JFET _ TO-18, Projected EOL: 2049-02-05 COO: United States of America ECCN: EAR99 Lead time: 24 Weeks, 0 Days |
830 Alternates Available |
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$12.0100 | Buy Now |
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Onlinecomponents.com | Jfet To-18 Rohs Compliant: Yes |Microchip 2N2609 RoHS: Compliant | 830 Factory Stock |
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$11.7700 / $17.1600 | Buy Now |
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NAC | JFETs RoHS: Compliant Min Qty: 29 Package Multiple: 1 | 0 |
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$10.4600 / $12.6200 | Buy Now |
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Cytech Systems Limited | JFET P-CH 30V 10MA TO18 | 25 |
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RFQ | |
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Master Electronics | Jfet To-18 Rohs Compliant: Yes |Microchip 2N2609 RoHS: Compliant | 830 Factory Stock |
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$11.7700 / $17.1600 | Buy Now |
Part Details for 2N2609
2N2609 CAD Models
2N2609 Part Data Attributes
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2N2609
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
2N2609
Microchip Technology Inc
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | TO-18, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 24 Weeks | |
| Case Connection | GATE | |
| Configuration | SINGLE | |
| FET Technology | JUNCTION | |
| JEDEC-95 Code | TO-206AA | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N2609
This table gives cross-reference parts and alternative options found for 2N2609. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N2609, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N2609 | Texas Instruments | Check for Price | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 | 2N2609 vs 2N2609 |
| 2N2609E3 | Microchip Technology Inc | Check for Price | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA | 2N2609 vs 2N2609E3 |
| JANX2N2609 | Solitron Devices Inc | Check for Price | Small Signal Field-Effect Transistor, | 2N2609 vs JANX2N2609 |
| 2N2609 | InterFET Corporation | Check for Price | Small Signal Field-Effect Transistor, P-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN | 2N2609 vs 2N2609 |
2N2609 Frequently Asked Questions (FAQ)
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The 2N2609 is a general-purpose NPN transistor, and its maximum operating frequency is not explicitly stated in the datasheet. However, based on its transition frequency (fT) of 250 MHz, it is suitable for low-to-medium frequency applications up to around 100 MHz.
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To ensure the 2N2609 is properly biased for linear operation, you should operate it in the active region, where the base-emitter voltage (VBE) is around 0.7 V and the collector-emitter voltage (VCE) is greater than 1 V. You can use a voltage divider or a current source to set the base voltage, and ensure the collector current is within the recommended range.
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The maximum power dissipation of the 2N2609 is not explicitly stated in the datasheet. However, based on its maximum collector current (IC) of 500 mA and maximum collector-emitter voltage (VCE) of 40 V, the maximum power dissipation can be estimated to be around 2 W. You should ensure that the device is properly heat-sinked to prevent overheating.
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Yes, the 2N2609 can be used as a switch, but it's not ideal for high-frequency switching applications due to its relatively low transition frequency (fT) of 250 MHz. It's more suitable for low-frequency switching applications, such as in power supplies or motor control circuits. You should ensure that the device is properly biased and driven to minimize switching losses.
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To protect the 2N2609 from electrostatic discharge (ESD), you should handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. You should also ensure that the device is properly packaged and stored in an ESD-safe environment. Additionally, you can add ESD protection circuits, such as a diode or a resistor, to the device's pins to prevent ESD damage.