Part Details for 2N2484UBG by STMicroelectronics
Results Overview of 2N2484UBG by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2N2484UBG Information
2N2484UBG by STMicroelectronics is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N2484UBG
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2N2484UBG
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Avnet Americas | - Bulk (Alt: 2N2484UBG) RoHS: Not Compliant Min Qty: 25 Package Multiple: 10 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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RFQ |
Part Details for 2N2484UBG
2N2484UBG CAD Models
2N2484UBG Part Data Attributes
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2N2484UBG
STMicroelectronics
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Datasheet
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2N2484UBG
STMicroelectronics
Hi-Rel NPN bipolar transistor 60 V, 0.05 A
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Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | HIGH RELIABILITY | |
Collector Current-Max (IC) | 0.5 A | |
Collector-Base Capacitance-Max | 6 pF | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 250 | |
JESD-30 Code | R-PDSO-N3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 0.36 W | |
Power Dissipation-Max (Abs) | 0.73 W | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
VCEsat-Max | 0.35 V |