Part Details for 2N2369A by STMicroelectronics
Results Overview of 2N2369A by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N2369A Information
2N2369A by STMicroelectronics is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N2369A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 240 |
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Bristol Electronics | 103 |
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RFQ |
Part Details for 2N2369A
2N2369A CAD Models
2N2369A Part Data Attributes
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2N2369A
STMicroelectronics
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Datasheet
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2N2369A
STMicroelectronics
200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Collector Current-Max (IC) | 0.2 A | |
| Collector-Base Capacitance-Max | 4 pF | |
| Collector-Emitter Voltage-Max | 15 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JEDEC-95 Code | TO-18 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 1.2 W | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 500 MHz | |
| Turn-off Time-Max (toff) | 18 ns | |
| Turn-on Time-Max (ton) | 12 ns | |
| VCEsat-Max | 0.5 V |
Alternate Parts for 2N2369A
This table gives cross-reference parts and alternative options found for 2N2369A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N2369A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| JANTXV2N2369A | Motorola Mobility LLC | Check for Price | 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18, TO-18, 3 PIN | 2N2369A vs JANTXV2N2369A |
| JANTX2N2369A | Raytheon Semiconductor | Check for Price | Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-18, | 2N2369A vs JANTX2N2369A |
| JAN2N2369A | Silicon Transistor Corporation | Check for Price | Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN | 2N2369A vs JAN2N2369A |
| 2N2369A | TT Electronics Resistors | Check for Price | Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN | 2N2369A vs 2N2369A |
| JANTXV2N2369A | Raytheon Semiconductor | Check for Price | Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-18, | 2N2369A vs JANTXV2N2369A |
| 2N2369A | Crimson Semiconductor Inc | Check for Price | Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | 2N2369A vs 2N2369A |
| 2N2369A | Zetex / Diodes Inc | Check for Price | Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | 2N2369A vs 2N2369A |
2N2369A Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the 2N2369A is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage and current ratings. As a general rule, it's recommended to operate the device within the specified voltage and current limits to ensure safe operation.
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To ensure the 2N2369A is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically around 0.6-0.7V) and that the collector-emitter voltage (VCE) is sufficient to maintain a linear operating region. Additionally, the base current should be limited to prevent saturation and ensure a stable operating point.
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The recommended PCB layout for the 2N2369A involves keeping the leads as short as possible, using a solid ground plane, and ensuring good thermal conductivity to dissipate heat. A heat sink or thermal pad may be necessary for high-power applications. It's also important to follow proper PCB design guidelines for high-frequency and high-current applications.
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Yes, the 2N2369A can be used as a switch, but it's essential to consider the device's switching characteristics, such as turn-on and turn-off times, and ensure that the base drive is sufficient to quickly switch the device on and off. Additionally, the device's power handling capabilities and thermal management should be considered to prevent overheating and ensure reliable operation.
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To protect the 2N2369A from electrostatic discharge (ESD), it's recommended to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, incorporating ESD protection devices, such as diodes or resistors, in the circuit design can help prevent damage from ESD events.