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Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 Pin,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N1486 by Microsemi Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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NexGen Digital | 5 |
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RFQ |
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2N1486
Microsemi Corporation
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Datasheet
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2N1486
Microsemi Corporation
Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 Pin,
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Microsemi Corporation | |
Collector Current-Max (IC) | 3 A | |
Collector-Emitter Voltage-Max | 55 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 35 | |
JEDEC-95 Code | TO-8 | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | NPN | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for 2N1486. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N1486, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N1486E3 | Microsemi Corporation | Check for Price | Power Bipolar Transistor | 2N1486 vs 2N1486E3 |
The recommended operating temperature range for the 2N1486 is -55°C to 150°C, although it can withstand storage temperatures from -65°C to 200°C.
The 2N1486 is a sensitive device and requires proper ESD protection during handling and assembly. Use anti-static wrist straps, mats, and packaging to prevent damage from electrostatic discharge.
The maximum power dissipation for the 2N1486 is 1.5 W at a case temperature of 25°C. However, this value can be derated based on the operating temperature and other factors.
While the 2N1486 is primarily designed for linear applications, it can be used in switching applications with proper design considerations. However, its switching characteristics may not be as optimal as those of a dedicated switching transistor.
To ensure reliable operation of the 2N1486 in a high-reliability application, follow proper design guidelines, use a robust PCB layout, and implement adequate thermal management. Additionally, consider using a radiation-hardened version of the device if operating in a radiation-rich environment.