Datasheets
2SD1781A_R1_00001 by:

Power Bipolar Transistor

Part Details for 2SD1781A_R1_00001 by PanJit Semiconductor

Results Overview of 2SD1781A_R1_00001 by PanJit Semiconductor

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2SD1781A_R1_00001 Information

2SD1781A_R1_00001 by PanJit Semiconductor is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
CO-059BNCX200-001 Amphenol Cables on Demand Amphenol CO-059BNCX200-001 BNC Male to BNC Male (RG59) 75 Ohm Coaxial Cable Assembly (RG59/U Solid) 1ft
CO-058SMAX200-001 Amphenol Cables on Demand Amphenol CO-058SMAX200-001 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 1ft
CS-USBAA00000-001 Amphenol Cables on Demand Amphenol CS-USBAA00000-001 Molded USB 2.0 Cable - Type A-A 1m

Price & Stock for 2SD1781A_R1_00001

Part # Distributor Description Stock Price Buy
DISTI # 241-2SD1781AR100001
Mouser Electronics Bipolar Transistors - BJT NPN Low Vce(sat) Transistor RoHS: Compliant 2562
  • 1 $0.4200
  • 10 $0.3220
  • 100 $0.2000
  • 500 $0.1380
  • 1,000 $0.1050
  • 3,000 $0.0940
  • 6,000 $0.0870
  • 9,000 $0.0810
  • 24,000 $0.0670
$0.0670 / $0.4200 Buy Now
DISTI # 2SD1781A-R1
TME Transistor: NPN, bipolar, 50V, 3A, 1.25W, SOT23 Min Qty: 1 5875
  • 1 $0.1930
  • 10 $0.1350
  • 100 $0.1210
  • 250 $0.1020
  • 500 $0.0910
  • 1,000 $0.0840
  • 3,000 $0.0800
  • 9,000 $0.0720
$0.0720 / $0.1930 Buy Now
NAC NPN Low Vce(sat) Transistor RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
  • 3,000 $0.0820
  • 12,000 $0.0760
  • 48,000 $0.0710
$0.0710 / $0.0820 Buy Now
DISTI # 2SD1781A_R1_00001
Avnet Silica Transistor GP BJT NPN 50V 3A 3Pin SOT23 TR (Alt: 2SD1781A_R1_00001) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Silica - 0
Buy Now

Part Details for 2SD1781A_R1_00001

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2SD1781A_R1_00001 Part Data Attributes

2SD1781A_R1_00001 PanJit Semiconductor
Buy Now Datasheet
Compare Parts:
2SD1781A_R1_00001 PanJit Semiconductor Power Bipolar Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer PANJIT INTERNATIONAL INC
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2016-06-06
Samacsys Manufacturer PANJIT
Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz

2SD1781A_R1_00001 Related Parts

2SD1781A_R1_00001 Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for the 2SD1781A_R1_00001 is -55°C to 150°C, as specified in the datasheet.

  • To ensure reliability, follow the recommended derating curves for power dissipation and junction temperature, and consider using a heat sink or thermal management system to keep the device within the recommended operating temperature range.

  • The maximum SOA for the 2SD1781A_R1_00001 is not explicitly stated in the datasheet, but it can be determined by consulting the device's voltage and current ratings, as well as the thermal characteristics.

  • Yes, the 2SD1781A_R1_00001 can be used in switching applications, but it's essential to consider the device's switching characteristics, such as turn-on and turn-off times, and ensure that the application is within the device's ratings and specifications.

  • To prevent electrostatic discharge (ESD) damage, follow proper handling and storage procedures, such as using ESD-safe materials, grounding yourself before handling the device, and using ESD protection devices or circuits in the application.

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